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    Littelfuse Inc IXTT140P10T

    MOSFET P-CH 100V 140A TO268
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    DigiKey IXTT140P10T Tube 283 1
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    Verical IXTT140P10T 60 1
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    IXTT140P10T 30 5
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    Arrow Electronics IXTT140P10T 60 37 Weeks 1
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    Newark IXTT140P10T Bulk 30 1
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    RS IXTT140P10T Bulk 8 Weeks 30
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    IXYS Corporation IXTT140P10T

    MOSFETs P-Channel: Standard MOSFET
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    Mouser Electronics IXTT140P10T 493
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    TME IXTT140P10T 1
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    New Advantage Corporation IXTT140P10T 200 1
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    IXTT140P10T Datasheets (1)

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    IXTT140P10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 140A TO-268 Original PDF

    IXTT140P10T Datasheets Context Search

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    IXTH140P10T

    Abstract: IXTT140P10T
    Text: Preliminary Technical Information IXTT140P10T IXTH140P10T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 12mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTT140P10T IXTH140P10T -100V -140A O-268 O-247 140P10T IXTH140P10T PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTT140P10T IXTH140P10T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 10mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT140P10T IXTH140P10T -100V -140A O-268 140P10T A8-P10) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTT140P10T IXTH140P10T RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 12mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTT140P10T IXTH140P10T -100V -140A O-268 140P10T PDF