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    IXYS Corporation IXTH140P10T

    MOSFETs TrenchP Channel Power MOSFETs
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    Mouser Electronics IXTH140P10T 434
    • 1 $17.72
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    Verical IXTH140P10T 5 4
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    Newark IXTH140P10T Bulk 169 1
    • 1 $17.56
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    Future Electronics IXTH140P10T Tube 24 Weeks 30
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    TTI IXTH140P10T Tube 300 30
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    TME IXTH140P10T 6 1
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    New Advantage Corporation IXTH140P10T 266 1
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    Littelfuse Inc IXTH140P10T

    DiscMSFT PChan-Trench Gate TO-247AD | Littelfuse IXTH140P10T
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    RS IXTH140P10T Bulk 8 Weeks 30
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    IXTH140P10T Datasheets (1)

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    IXTH140P10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 140A TO-247 Original PDF

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    IXTH140P10T

    Abstract: IXTT140P10T
    Text: Preliminary Technical Information IXTT140P10T IXTH140P10T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 12mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTT140P10T IXTH140P10T -100V -140A O-268 O-247 140P10T IXTH140P10T PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTT140P10T IXTH140P10T TrenchPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 10mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT140P10T IXTH140P10T -100V -140A O-268 140P10T A8-P10) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTT140P10T IXTH140P10T RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -140A Ω 12mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTT140P10T IXTH140P10T -100V -140A O-268 140P10T PDF