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    K4E151611D Search Results

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    K4E151611D Price and Stock

    Samsung Semiconductor K4E151611D-TC60

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics K4E151611D-TC60 216
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    Samsung Semiconductor K4E151611DTC60

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    Bristol Electronics K4E151611DTC60 24
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    Samsung Semiconductor K4E151611D-TL50

    1M X 16 EDO DRAM, 50 ns, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components K4E151611D-TL50 84
    • 1 $4.8
    • 10 $2.4
    • 100 $2.08
    • 1000 $2.08
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    Samsung Semiconductor K4E151611D-JC60

    IC,DRAM,EDO,1MX16,CMOS,SOJ,42PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components K4E151611D-JC60 80
    • 1 $13.5
    • 10 $12
    • 100 $11.1
    • 1000 $11.1
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    K4E151611D Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4E151611D Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E151611D-J Samsung Electronics 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. Original PDF
    K4E151611D-JC50 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4E151611D-JC60 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4E151611D-JL45 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4E151611D-JL50 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4E151611D-LC50 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151611D-LC60 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151611D-LL45 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151611D-LL50 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151611D-LL60 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151611D-T Samsung Electronics 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. Original PDF
    K4E151611D-TC50 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151611D-TC60 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151611D-TL45 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151611D-TL50 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4E151611D-TL60 Samsung Electronics DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF

    K4E151611D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4E151612D

    Abstract: K4E151612D-J K4E171611D K4E171611D-J K4E171612D K4E171612D-J K4E151611D K4E151611D-J
    Text: K4E171611D, K4E151611D K4E171612D, K4E151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K


    Original     		K4E171611D, K4E151611D K4E171612D, K4E151612D 16Bit 1Mx16 400mil K4E151612D K4E151612D-J K4E171611D K4E171611D-J K4E171612D K4E171612D-J K4E151611D K4E151611D-J PDF

    K4E151612D-J

    Abstract: K4E151611D K4E151611D-J K4E151612D K4E171611D K4E171611D-J K4E171612D K4E171612D-J
    Text: K4E171611D, K4E151611D K4E171612D, K4E151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K


    Original     		K4E171611D, K4E151611D K4E171612D, K4E151612D 16Bit 1Mx16 Sam1612D 400mil K4E151612D-J K4E151611D K4E151611D-J K4E151612D K4E171611D K4E171611D-J K4E171612D K4E171612D-J PDF

    Untitled

    Abstract: No abstract text available
    Text: M53230224DE2/DJ2 DRAM MODULE M53230224DE2/DJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53230224D is a 2Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M53230224D


    Original     		M53230224DE2/DJ2 M53230224DE2/DJ2 1Mx16 M53230224D 2Mx32bits M53230224D M53230224DE2-C cycles/16ms 1Mx16bits 42-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53230224DE2/DJ2 DRAM MODULE M53230224DE2/DJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53230224D is a 2Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M53230224D


    Original     		M53230224DE2/DJ2 1Mx16 M53230224D 2Mx32bits 1Mx16bits 42-pin 72-pin M53230224DE2/DJ2 PDF