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    K4E171612D Search Results

    K4E171612D Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4E171612D Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    K4E171612D-J Samsung Electronics 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Original PDF
    K4E171612D-T Samsung Electronics 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Original PDF

    K4E171612D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4E151612D

    Abstract: K4E151612D-J K4E171611D K4E171611D-J K4E171612D K4E171612D-J K4E151611D K4E151611D-J
    Text: K4E171611D, K4E151611D K4E171612D, K4E151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K


    Original     		K4E171611D, K4E151611D K4E171612D, K4E151612D 16Bit 1Mx16 400mil K4E151612D K4E151612D-J K4E171611D K4E171611D-J K4E171612D K4E171612D-J K4E151611D K4E151611D-J PDF

    K4E151612D-J

    Abstract: K4E151611D K4E151611D-J K4E151612D K4E171611D K4E171611D-J K4E171612D K4E171612D-J
    Text: K4E171611D, K4E151611D K4E171612D, K4E151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K


    Original     		K4E171611D, K4E151611D K4E171612D, K4E151612D 16Bit 1Mx16 Sam1612D 400mil K4E151612D-J K4E151611D K4E151611D-J K4E151612D K4E171611D K4E171611D-J K4E171612D K4E171612D-J PDF