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    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS I NC b7 E D • 7^4142 KM41C16001 DGlbOfl? Q B E ■ CMOS DRAM 1 6 M x 1 Bit CM O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C16001 is a CMOS high speed 16,777,216 bit x 1 Dynamic Random A ccess Memory. Its


    OCR Scan     		KM41C16001 KM41C16001 110ns KM41C16001-7 130ns KM41C16001-8 150ns KM41C16001-6 PDF

    KM41C16001-8

    Abstract: No abstract text available
    Text: KM41C16001 CMOS DRAM 16M x1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: I rac tcAc ÍRC 60ns 15ns 110ns KM41C16001-7 70ns 20ns 130ns KM41C16001-8 80ns 20ns 150ns KM41C16001-6 • • • • • • • • •


    OCR Scan     		KM41C16001 KM41C16001-6 KM41C16001-7 KM41C16001-8 110ns 130ns 150ns KM41C16001 KM41C16001-8 PDF

    41C16100

    Abstract: 24-PIN 41C16000
    Text: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS


    OCR Scan     		KM418V256ALLT KM418V256ALLTR KM416C157AJ KM416C157AZ KM416C157AT KM416C157ATR 416C157ALZ KM416C157ALT KM416C157ALTR KM416C157ALLZ 41C16100 24-PIN 41C16000 PDF