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    km6161000bl7

    Abstract: No abstract text available
    Text: Preliminary KM6161OOOBL / L-L CMOS SRAM 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550^W (max.)L-Version : 110|iW (max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		KM6161OOOBL 64Kx16 550MW 660mW I/01-I/08 KM6161000BLT/LT-L: 400mil KM6161000BLR/LR-L: KM6161000BL/L-L km6161000bl7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6161OOOBL / L-L 64Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby(CMOS) :550nW(max.)L-Version :110|iW(max.)LL-Version Operating : 660mW (max.) • Single 5V±10% Power Supply


    OCR Scan     		KM6161OOOBL 64Kx16 550nW 660mW KM6161OOOBLT/LT-L: 400mil KM6161OOOBLR/LR-L: KM6161000BL/L-L 576-bit PDF

    TT1102

    Abstract: 100PF
    Text: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION The KM6161000BLI/L1-L is a 1,048,576-bit high speed • Industrial Temperature Range : -40 to 85°C Static Random Access Memory organized as 65,536


    OCR Scan     		KM6161000BLI 64Kx16 550pW 275nW 660mW I/01-I/08 KM6161000BLTI/LTI-L: 400mil KM6161000BLRI/LR1-L: TT1102 100PF PDF

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L PDF

    km6161000blti

    Abstract: FTC 960 6161000BL
    Text: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • • The KM6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature


    OCR Scan     		KM6161000B 64Kx16 64Kx16 44-TSOP I/01-7 7CJb4142 023bMcl km6161000blti FTC 960 6161000BL PDF

    KM6161000BLT5L

    Abstract: No abstract text available
    Text: KM6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION The KM6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package


    OCR Scan     		KM6161000B 44-TSOP D03bbbb KM6161000BLT5L PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION •Industrial Temperature Range : -40 to 85°C The KM6161000BLI/LI-L is a 1,048,576-bit high speed >Fast Access Time : 70/100 ns max.


    OCR Scan     		KM6161000BLI 64Kx16 KM6161000BLI/LI-L 576-bit 550uW 6161000BLI/LI-L 660mW Q021271 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min


    OCR Scan     		KM6161000B 64Kx16 64Kx16 44-TS0P PDF

    Untitled

    Abstract: No abstract text available
    Text: KM61610QQB Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION • • • • • • . The KM6161000B fam ily is fabricated by SAMSUNG’S advanced CMOS process technology. The fam ily support vari­ ous operating temperature ranges and has various package


    OCR Scan     		KM61610QQB 44-TSOP2-400F/R KM6161000B KM6161OOh PDF

    a13e

    Abstract: No abstract text available
    Text: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min


    OCR Scan     		KM6161000B 64Kx16 64Kx16 44-TSOP a13e PDF