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    6161000BL Price and Stock

    Samsung Electro-Mechanics KM6161000BLT-7L

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    Bristol Electronics KM6161000BLT-7L 63 1
    • 1 $8.25
    • 10 $6.1875
    • 100 $5.1562
    • 1000 $5.1562
    • 10000 $5.1562
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    Samsung Semiconductor KM6161000BLT-7L

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    Bristol Electronics KM6161000BLT-7L 5
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    6161000BL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TT1102

    Abstract: 100PF
    Text: Preliminary CMOS SRAM 6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION The 6161000BLI/L1-L is a 1,048,576-bit high speed • Industrial Temperature Range : -40 to 85°C Static Random Access Memory organized as 65,536


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    KM6161000BLI 64Kx16 550pW 275nW 660mW I/01-I/08 KM6161000BLTI/LTI-L: 400mil KM6161000BLRI/LR1-L: TT1102 100PF PDF

    km6161000blti

    Abstract: FTC 960 6161000BL
    Text: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • • The KM6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature


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    KM6161000B 64Kx16 64Kx16 44-TSOP I/01-7 7CJb4142 023bMcl km6161000blti FTC 960 6161000BL PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION • Process Technology : Poly Load • Organization : 64K x16 _ • Data Byte Control : LB=I/O i ~8, UB=I/09~16 • Power Supply Voltage : 4.5~5.5V • Low Data Retention Voltage : 2V Min


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    KM6161000B 44-TSOP2-4QOF/R 6161000B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM 6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION •Industrial Temperature Range : -40 to 85°C The 6161000BLI/LI-L is a 1,048,576-bit high speed >Fast Access Time : 70/100 ns max.


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    KM6161000BLI 64Kx16 KM6161000BLI/LI-L 576-bit 550uW 6161000BLI/LI-L 660mW Q021271 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min


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    KM6161000B 64Kx16 64Kx16 44-TS0P PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996


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    KM6161000B PDF

    a13e

    Abstract: No abstract text available
    Text: KM6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min


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    KM6161000B 64Kx16 64Kx16 44-TSOP a13e PDF