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Samsung Electro-Mechanics KM6161000BLT-7L
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Bristol Electronics	KM6161000BLT-7L		63		1	1 $8.25 10 $6.1875 100 $5.1562 1000 $5.1562 10000 $5.1562	Buy Now
Samsung Semiconductor KM6161000BLT-7L
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Bristol Electronics	KM6161000BLT-7L		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote

6161000B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: KM 6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History H is to ry D ra ft D a ta 0.0 Initial dra ft A ug ust 12th 1995 1.0 Finalize - O ne d a tashe et for com m e rcial and industrial part. A pril 15th 1996 2.0	OCR Scan	KM6161000B	PDF
TT1102 Abstract: 100PF Text: Preliminary CMOS SRAM 6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION The 6161000BLI/L1-L is a 1,048,576-bit high speed • Industrial Temperature Range : -40 to 85°C Static Random Access Memory organized as 65,536	OCR Scan	KM6161000BLI 64Kx16 550pW 275nW 660mW I/01-I/08 KM6161000BLTI/LTI-L: 400mil KM6161000BLRI/LR1-L: TT1102 100PF	PDF
km6161000blti Abstract: FTC 960 6161000BL Text: 6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • • The 6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature	OCR Scan	KM6161000B 64Kx16 64Kx16 44-TSOP I/01-7 7CJb4142 023bMcl km6161000blti FTC 960 6161000BL	PDF
Untitled Abstract: No abstract text available Text: 6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION • Process Technology : Poly Load • Organization : 64K x16 _ • Data Byte Control : LB=I/O i ~8, UB=I/09~16 • Power Supply Voltage : 4.5~5.5V • Low Data Retention Voltage : 2V Min	OCR Scan	KM6161000B 44-TSOP2-4QOF/R 6161000B	PDF
Untitled Abstract: No abstract text available Text: Preliminary CMOS SRAM 6161000BLI / Ll-L 64Kx16 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION •Industrial Temperature Range : -40 to 85°C The 6161000BLI/LI-L is a 1,048,576-bit high speed >Fast Access Time : 70/100 ns max.	OCR Scan	KM6161000BLI 64Kx16 KM6161000BLI/LI-L 576-bit 550uW 6161000BLI/LI-L 660mW Q021271	PDF
Untitled Abstract: No abstract text available Text: 6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min	OCR Scan	KM6161000B 64Kx16 64Kx16 44-TS0P	PDF
Untitled Abstract: No abstract text available Text: 6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996	OCR Scan	KM6161000B	PDF
Untitled Abstract: No abstract text available Text: 6161000B Family CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft August 12th 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15th 1996 Final	OCR Scan	KM6161000B	PDF
a13e Abstract: No abstract text available Text: 6161000B Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16 • Power Supply Voltage : 5.0V +/-10% • Low Data Retention Voltage : 2V Min	OCR Scan	KM6161000B 64Kx16 64Kx16 44-TSOP a13e	PDF