Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC36V7177A 7.1 – 7.7 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
-45dBc
25dBm
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MGFC36V7177A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
25dBm
10MHz
June/2004
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MGFC36V7177A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
25dBm
10MHz
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC36V7177A 7.1 – 7.7 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC36V7177A
MGFC36V7177A
-45dBc
25dBm
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI S EM IC O N D U CTO R <G aA s FET> MGFC36V7177 iro d u c t » o n p\an fo r P dicontinue 7 . 1 - 7 . 7 GHz BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 7 1 7 7 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.1 ~ 7.7
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MGFC36V7177
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IM335
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR \GaAs FET/ MGFC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G FC 36V7177A is an internally O U T L IN E D R A W IN G impedance-matched GaAs power FET especially designed fo r use in 7.1 ~ 7.7G H z
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MGFC36V7177A
36V7177A
IM335
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7177A -Shto 1,0 „ata«'«” S O IT .« ti a r ‘ . v.rni» are 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched Unit : millimeters (inches)
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MGFC36V7177A
MGFC36V7177A
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dssc
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET> MGFC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.1 —'7.7GHz band am plifiers. The hermetically
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MGFC36V7177A
MGFC36V7177A
45dBc
Item-01
10MHz
dssc
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC36 V 7 177 to r p . 0 * * “ 0 " p \ a n «>* d ls c o « « " u e 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7.1 ~ 7.7
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GFC36
MGFC36V7177
Item-01:
M5M27C102P,
RV-15
16-BIT)
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MGFC36V7177A
Abstract: fet 30 f 124
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7177 A « 8fnel f 7.1 -7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 7.1~7.7GHz
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FC36V7177
MGFC36VT177A
45dBc
ltem-01
10MHz
MGFC36V7177A
fet 30 f 124
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V7177A . 0 ^ „ o t > c • •• a;C W« 7.1 -7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~7.7GHz
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MGFC36V7177A
MGFC36V7177A
--51D
45dBc
Item-01
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MGF2430A
Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E
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12GHz
MGF4919E
MGF4914E
MGF49T4D
MGF4714AP
MGF4914D
MGF1923
MGF1902B
MGF2430A
MGF4919
MGF1402B
MGF2430
7.1 power amplifier circuit diagram
block diagram of power factor meter
mgf2445
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mgfc30
Abstract: MGFC39V5964A
Text: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10
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MGFC36V3742
FC36V3742A
GFC36V4460
MGFC36V4460A
MGFC38VS258
MGFC36V6964
mgfc30
MGFC39V5964A
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MGFC36V6471
Abstract: MGFC36V5964 MGFC36V4450
Text: A m it s u b is h i MGFC36VXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFC36VXXXX products are internally impedance matched devices for use in C-band power amplifier applications. • Class A operation • Internally matched to 50£2 • High output power
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MGFC36VXXXX
MGFC36VXXXX
MGFC36V5258-01
MGFC36V5258-51
MGFC36V5964-01
MGFC36V5964-51
MGFC36V6471-01
MGFC36V6471-51
MGFC36V7177-01
MGFC36V7177-51
MGFC36V6471
MGFC36V5964
MGFC36V4450
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3642G
Abstract: No abstract text available
Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m
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