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    MT49H32M9 Price and Stock

    Micron Technology Inc MT49H32M9BM-33:B

    IC DRAM 288MBIT PARALLEL 144UBGA
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    Micron Technology Inc MT49H32M9FM-33:B

    IC DRAM 288MBIT PARALLEL 144UBGA
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    Micron Technology Inc MT49H32M9SJ-25:B

    IC DRAM 288MBIT PARALLEL 144FBGA
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    Micron Technology Inc MT49H32M9FM-25:B

    IC DRAM 288MBIT PARALLEL 144UBGA
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    Micron Technology Inc MT49H32M9BM-25:B

    IC DRAM 288MBIT PARALLEL 144UBGA
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    MT49H32M9 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT49H32M9 Micron 288Mb CIO Reduced Latency Original PDF
    MT49H32M9BM-25:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H32M9BM-25:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA Original PDF
    MT49H32M9BM-33 Micron 288Mb RLDRAM Component Original PDF
    MT49H32M9BM-33:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H32M9BM-33:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS UBGA Original PDF
    MT49H32M9BM-33:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS UBGA Original PDF
    MT49H32M9BM-5 Micron 288Mb RLDRAM Component Original PDF
    MT49H32M9C Micron 288Mb SIO REDUCED LATENCY(RLDRAM II) Original PDF
    MT49H32M9CFM-xx Micron 288Mb SIO REDUCED LATENCY(RLDRAM II) Original PDF
    MT49H32M9FM-25 Micron 288Mb RLDRAM Component Original PDF
    MT49H32M9FM-25 Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS 144UBGA Original PDF
    MT49H32M9FM-25:B Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H32M9FM-25:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H32M9FM-25 TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H32M9FM-33 Micron 288Mb RLDRAM Component Original PDF
    MT49H32M9FM-33 Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS 144UBGA Original PDF
    MT49H32M9FM-33:B Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H32M9FM-33:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H32M9FM-33 TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF

    MT49H32M9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MICRON BGA PART MARKING

    Abstract: No abstract text available
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING

    09005aef809f284b

    Abstract: No abstract text available
    Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9‡ Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB 288Mb MT49H8M36 MT49H16M18 09005aef80a41b46/zip: 09005aef809f284b

    MICRON BGA PART MARKING

    Abstract: NF 034 T6N 700 MT49H16M18
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING NF 034 T6N 700 MT49H16M18

    smd dk qk

    Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM

    MT49H16M18C

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H8M18C MT49H16M18C

    MT49H16M18

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MT49H16M18

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C MT49H16M18C

    MT49H16M18

    Abstract: No abstract text available
    Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb 09005aef80a41b46/zip: 09005aef809f284b MT49H8M36 MT49H16M18

    marking code a02 SMD Transistor

    Abstract: transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb MT49H8M36 marking code a02 SMD Transistor transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE

    MT49H16M18

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb MT49H8M36 MT49H16M18

    MARKING H1 AMP

    Abstract: MT49H16M18
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MARKING H1 AMP MT49H16M18

    plastic BA7 marking code

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 plastic BA7 marking code

    MT49H16M18

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB 288Mb MT49H8M36 MT49H16M18

    SMD d1c

    Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C SMD d1c SMD MARKING CODE ACY qkx capacitor smd codes marking A21

    smd marking codes BA5

    Abstract: MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H16M18C smd marking codes BA5

    MICRON BGA PART MARKING

    Abstract: MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b59/Source: 09005aef809f284b MICRON BGA PART MARKING MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h

    MT49H16M18C

    Abstract: No abstract text available
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C

    09005aef809f284b

    Abstract: No abstract text available
    Text: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization 8 Meg x 36, 16 Meg x 18, and 32 Meg x 9


    Original     		PDF 288Mb: 288Mb MT49H8M36 MT49H16M18 MT49H32M9 09005aef80a41b46/Source: 09005aef809f284b

    MT49H16M18

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MT49H16M18

    MT49H16M18

    Abstract: No abstract text available
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MT49H16M18

    transistor SMD DKL

    Abstract: BA5 marking MARKING SMD x9 Micron DDR marking H12 smd cod A22 SMD MARKING CODE A53 SMD Marking Code marking BAX marking code a02 SMD Transistor Marking D1c
    Text: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


    Original     		PDF 288Mb: 288Mb MT49H8M36 MT49H16M18 MT49H32M9 09005aef80a41b46/Source: 09005aef809f284b MT49H8M36 transistor SMD DKL BA5 marking MARKING SMD x9 Micron DDR marking H12 smd cod A22 SMD MARKING CODE A53 SMD Marking Code marking BAX marking code a02 SMD Transistor Marking D1c

    BA5 marking

    Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb MT49H16M18C MT49H32M9C 144-Ball 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C BA5 marking BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE

    E33-DW1

    Abstract: PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron
    Text: インフォメーション 288M Low Latency DRAMと他社互換製品の 互換性 資料番号 M19702JJ1V0IF00（第1版） 発行年月 March 2009 NS NEC Electronics Corporation 2009 〔メ モ〕 2 インフォメーション M19702JJ1V0IF CMOSデバイスの一般的注意事項


    Original     		PDF M19702JJ1V0IF001 M19702JJ1V0IF PD48288236 PD48288218 PD48288209 PD48288118 PD48288209, PD48288118 E33-DW1 PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron

    Xilinx spartan xc3s400_ft256

    Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
    Text: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,


    Original     		PDF UG086 DQS10 DQS11 DQS12 DQS13 DQS14 DQS15 DQS16 DQS17 Xilinx spartan xc3s400_ft256 XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256