MT49H16M18C
Abstract: No abstract text available
Text: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)
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288Mb
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
MT49H8M18C
MT49H16M18C
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15READ
Abstract: marking ba5 MT49H8M18C MT49H16M18C
Text: 288Mb: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)
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Original
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288Mb:
288Mb
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
MT49H8M18C
15READ
marking ba5
MT49H16M18C
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MT49H16M18C
Abstract: No abstract text available
Text: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O
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288Mb
288Mb
MT49H8M18C
MT49H16M18C
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MT49H16M18C
Abstract: No abstract text available
Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O
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Original
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288Mb
288Mb
09005aef80a41b59/zip:
09005aef811ba111
MT49H8M18C
MT49H16M18C
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PDF
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CY7C1315AV18-200BZC
Abstract: RLDRAM
Text: QDR SRAM and RLDRAM: A Comparative Analysis By Anuj Chakrapani, Cypress Semiconductor Corp. Abstract Today’s high-speed networking applications require high-bandwidth and high-density memory solutions. For instance, typical networking line cards need memories for a variety of operations that include packet
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relatidatasheets/rldram/MT49H16M18C
TN-49-02,
com/pdf/technotes/RLDRAMII/TN4902
TN-49-01,
CY7C1315AV18-200BZC
RLDRAM
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BA5 marking
Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O
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Original
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288Mb
MT49H16M18C
MT49H32M9C
144-Ball
288Mb
09005aef80a41b59/zip:
09005aef811ba111
MT49H8M18C
BA5 marking
BA7 marking
plastic BA5 marking code
A53 SMD Marking Code
ba7 transistor
SMD MARKING CODE ACY
MT49H16M18C
smd cod
RLDRAM
A22 SMD MARKING CODE
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