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    SPP30N03L Search Results

    SPP30N03L Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP30N03L Infineon Technologies SIPMOS Power Transistor Original PDF
    SPP30N03L Infineon Technologies Original PDF
    SPP30N03L Siemens Original PDF
    SPP30N03L Siemens Original PDF
    SPP30N03L Toshiba Power MOSFETs Cross Reference Guide Original PDF

    SPP30N03L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Siemens DIODE E 1220

    Abstract: SPB30N03L SPP30N03L
    Text: SPP30N03L SPB30N03L Preliminary data SIPMOS  Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPP30N03L 30 V 30 A SPB30N03L RDS on @ VGS 0.028 Ω VGS = 4.5 V


    Original     		PDF SPP30N03L SPB30N03L P-TO220-3-1 Q67040-S4143-A2 P-TO263-3-2 Q67040-S4737-A3 Siemens DIODE E 1220 SPB30N03L SPP30N03L

    Siemens DIODE E 1220

    Abstract: No abstract text available
    Text: SPP30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.018 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated


    Original     		PDF SPP30N03L P-TO220-3-1 Q67040-S4737-A2 SPB30N03L P-TO263-3-2 Q67040-S4143-A3 Siemens DIODE E 1220

    30N03L

    Abstract: 30N03 SPB30N03L SPP30N03L
    Text: SPP 30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.018 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • Logic Level • dv/dt rated


    Original     		PDF 30N03L SPP30N03L P-TO220-3-1 Q67040-S4737-A2 SPB30N03L P-TO263-3-2 Q67040-S4143-A3 30N03L 30N03 SPB30N03L SPP30N03L

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    Siemens DIODE E 1220

    Abstract: No abstract text available
    Text: SIEMENS SPP30N03L SPB30N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPP30N03L Vds 30 V b 30 A SPB30N03L ffDS on @ VGS 0.028 O V/gs = 4.5V


    OCR Scan     		PDF SPP30N03L SPB30N03L SPB30N03L P-T0220-3-1 P-T0263-3-2 Q67040-S4143-A2 Q67040-S4737-A3 Siemens DIODE E 1220

    SMD Transistor t30

    Abstract: transistor SMD t30
    Text: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level


    OCR Scan     		PDF 30N03L SPP30N03L P-T0220-3-1 Q67040-S4737-A2 P-T0263-3-2 Q67040-S4143-A3 SPB30N03L S35bQ5 Q133777 SQT-89 SMD Transistor t30 transistor SMD t30

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S