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    SGS Semiconductor Ltd STP60N0514

    Power Field-Effect Transistor, 60A I(D), 50V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    STP60N05 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP60N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP60N05-14 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP60N05-16 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STP60N05-16 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP60N05FI Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STP60N05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP60N05

    Abstract: STP60N05FI
    Text: STP60N05 STP60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.02 Ω < 0.02 Ω 60 A 32 A TYPICAL RDS(on) = 0.017 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP60N05 STP60N05FI 100oC 175oC O-220 ISOWATT220 STP60N05 STP60N05FI

    Untitled

    Abstract: No abstract text available
    Text: STP60N05-16 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)60# I(DM) Max. (A) Pulsed I(D)42 @Temp (øC)100# IDM Max (@25øC Amb)240 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)


    Original     		PDF STP60N05-16

    Untitled

    Abstract: No abstract text available
    Text: STP60N05FI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)32# I(DM) Max. (A) Pulsed I(D)22 @Temp (øC)100# IDM Max (@25øC Amb)240 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45# Minimum Operating Temp (øC)


    Original     		PDF STP60N05FI

    STP60N06

    Abstract: STP60N05-14 STP60N06-14
    Text: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP60N05-14 STP60N06-14 100oC O-220 STP60N06 STP60N05-14 STP60N06-14

    STP60N06-14

    Abstract: STP60N06 DD 127 D TRANSISTOR STP60N05-14 airbag TV150
    Text: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 V DSS R DS on ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP60N05-14 STP60N06-14 100oC O-220 STP60N06-14 STP60N06 DD 127 D TRANSISTOR STP60N05-14 airbag TV150

    STP60N06

    Abstract: STP60N06-16 STP60N05-16
    Text: STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05-16 STP60N06-16 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 60 V < 0.016 Ω < 0.016 Ω 60 A 60 A TYPICAL RDS(on) = 0.013 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP60N05-16 STP60N06-16 100oC O-220 STP60N06 STP60N06-16 STP60N05-16

    P60N06

    Abstract: P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06
    Text: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P60N05-14 ST P60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS o n ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP60N05-14 STP60N06-14 P60N05-14 P60N06-14 100oC O-220 P60N06 P60N06-14 p60n05 P60N05-14 p60n P60n0 STP60N05-14 STP60N06-14 stp60n06

    Untitled

    Abstract: No abstract text available
    Text: STP60N05 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)60# I(DM) Max. (A) Pulsed I(D)42 @Temp (øC)100# IDM Max (@25øC Amb)240 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)


    Original     		PDF STP60N05

    schematic diagram dc-ac welding inverter

    Abstract: schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840
    Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ71 BUZ71FI 100oC 175oC O-220 ISOWATT220 schematic diagram dc-ac welding inverter schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    STP3N60FI

    Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
    Text: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L


    Original     		PDF O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    STP60

    Abstract: stp60n06
    Text: SGS-THOMSON £j ï ¡mora « STP60N05-16 STP60N06- 16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 dss 50 V 60 V . RDS on Id < 0 .0 1 6 Q. < 0 .0 1 6 Q. 60 A 60 A Q . . TYPICAL RDs(on) = 0.013 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STP60N05-16 STP60N06- STP60 stp60n06

    STP60N06-16

    Abstract: STP60N06 STP60N05 STP60N05-16 4s32 LD30-A STP60N05 10 LD30A
    Text: 7 ^ 2 ^ 2 3 7 D 0 4 b S 5 3 4 5 2 M S G T H SGS-THOMSON iï*^@^[I gTÎMO(gS STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05-16 STP60N 06-16 • . ■ ■ ■ . ■ V dss R D S (o n Id 50 V 60 V < 0.016 Q < 0.016 a


    OCR Scan     		PDF DD4bS53 STP60N05-16 STP60N06-16 STP60N05 STP60N06- 7T2C1237 STP60N05-16/STP60N06-16 STP60N06-16 STP60N06 4s32 LD30-A STP60N05 10 LD30A

    STP60N05FI

    Abstract: 20KN50 STP60N05 W237 SGS Transistor
    Text: 7=12=1237 □04fciS3cî Dfi2 • SGTH SGS-THOMSON STP60N05 STP60N05FI ¡ILJOTMiiKgS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP60N05 STP60N05FI ■ . ■ . ■ . ■ . . 50 V 50 V RDS on < 0.02 < 0.02 Ü n Id 60 A 32 A TYPICAL RDS(on) = 0.017 a


    OCR Scan     		PDF 04fci53cà STP60N05 STP60N05FI STP60N05 STP60N05FI 7TH1237 4b545 STP60N05/FI 20KN50 W237 SGS Transistor

    Untitled

    Abstract: No abstract text available
    Text: 7*12^237 D04bSS3 452 M SG TH SGS-THOMSON üO T ô*S STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 • . • . ■ . . V dss R d S ( o ii Id 50 V 60 V < 0 .0 1 6 Q < 0 .0 1 6 a 60 A


    OCR Scan     		PDF D04bSS3 STP60N05-16 STP60N06-16 LAMPDRIV80 TP60N STP60N05-16/STP60N06-16

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON [MOigœilLiera *® STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP 60N 05-14 STP 60N 06-14 . . . . . . . . V dss R d S o ii Id 50 V 60 V < 0 .014 a. < 0 .014 Q. 60 A 60 A TYPICAL RDs(on) = 0.012 £1


    OCR Scan     		PDF STP60N05-14 STP60N06-14

    GC27980

    Abstract: No abstract text available
    Text: SGS-THOMSON ï ULKgraMOeS £j STP60N05 STP60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 05 STP60N 05FI V dss RDS on Id 50 V 50 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


    OCR Scan     		PDF TP60N STP60N STP60N05 STP60N05FI GC27980

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON !LiM iO gS stp6onos-i4 STP60N06-1 4 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRE LI MI NARY DATA TYPE V dss S TP 60N 05-14 S TP 60N 06-14 50 V 60 V R DS(on < 0 .0 1 4 ß < 0 .0 1 4 ß Id 60 A 60 A • . ■ • . ■ ■ TYPICAL R D S (on) =0.012 a


    OCR Scan     		PDF STP60N06-1