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    SI1012CR Price and Stock

    Vishay Siliconix SI1012CR-T1-GE3

    MOSFET N-CH 20V SC75A
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    DigiKey SI1012CR-T1-GE3 Digi-Reel 81,004 1
    • 1 $0.47
    • 10 $0.286
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    • 1000 $0.12087
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    SI1012CR-T1-GE3 Cut Tape 81,004 1
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    SI1012CR-T1-GE3 Reel 78,000 3,000
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    RS SI1012CR-T1-GE3 Bulk 3,000
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    ES Components SI1012CR-T1-GE3
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    New Advantage Corporation SI1012CR-T1-GE3 57,000 1
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    Vishay Intertechnologies SI1012CR-T1-GE3

    Trans MOSFET N-CH 20V 0.63A 3-Pin SC-75A T/R
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    Arrow Electronics SI1012CR-T1-GE3 24,000 6 Weeks 3,000
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    SI1012CR-T1-GE3 Cut Strips 3 12 Weeks 1
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    Verical SI1012CR-T1-GE3 24,000 3,000
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    Avnet Americas SI1012CR-T1-GE3 Reel 3,000 6 Weeks 3,000
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    SI1012CR-T1-GE3 Ammo Pack 17 Weeks, 3 Days 1
    • 1 $0.28
    • 10 $0.202
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    Newark SI1012CR-T1-GE3 Reel 36,000 3,000
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    SI1012CR-T1-GE3 Cut Tape 1,980 1
    • 1 $0.14
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    Mouser Electronics SI1012CR-T1-GE3 162,717
    • 1 $0.28
    • 10 $0.183
    • 100 $0.114
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    • 10000 $0.068
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    Quest Components SI1012CR-T1-GE3 2,332
    • 1 $0.75
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    SI1012CR-T1-GE3 2,332
    • 1 $0.75
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    TTI SI1012CR-T1-GE3 Reel 48,000 3,000
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    TME SI1012CR-T1-GE3 3,530 1
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    Avnet Asia SI1012CR-T1-GE3 8 Weeks 3,000
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    Chip-Germany GmbH SI1012CR-T1-GE3 1,237
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    EBV Elektronik SI1012CR-T1-GE3 21,000 7 Weeks 3,000
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    Vishay Intertechnologies SI1012R-T1-GE3

    MOSFETs 20V 0.6A 175mW 700mohm @ 4.5V
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    TTI SI1012R-T1-GE3 Reel 36,000 3,000
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    Vishay Huntington SI1012CR-T1-GE3

    Trans MOSFET N-CH 20V 0.63A 3-Pin SC-75A T/R / MOSFET N-CH 20V 0.63A SC-75A
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    Win Source Electronics SI1012CR-T1-GE3 27,576
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    • 1000 $0.079
    • 10000 $0.061
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    SI1012CR Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1012CR-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 630MA SC-75A Original PDF

    SI1012CR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si1012CR 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


    Original     		PDF Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


    Original     		PDF Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1012CR 2002/95/EC SC-75A 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1012CR 2002/95/EC SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


    Original     		PDF Si1012CR SC-75A 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si1012CR 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si1012CR-T1-GE3

    Abstract: SI1012CR
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 Qg (Typ.) 0.75 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1012CR 2002/95/EC SC-75A Si1012CR-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


    Original     		PDF Si1012CR SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI1012CR

    Abstract: No abstract text available
    Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 1.100 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated


    Original     		PDF Si1012CR SC-75A 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1012CR_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si1012CR AN609, 4479u 0026m 1692m 3402m 28-Mar-11

    Si1012cr

    Abstract: Si1012CR-T1-GE3 si1012r-t1-ge3
    Text: Specification Comparison Vishay Siliconix Si1012CR vs. Si1012R Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET SC-75A Identical Part Number Replacements: Si1012CR-T1-GE3 replaces Si1012R-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si1012CR Si1012R SC-75A Si1012CR-T1-GE3 Si1012R-T1-GE3 23-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Medical Diagnostics and Monitoring One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Medical Diagnostics and Monitoring X-Ray Machines 4 Patient Monitoring 5 Cardiac Pacing 6


    Original     		PDF VMN-MS6761-1212

    VJ5301M

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Medical Diagnostics and Monitoring One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Medical 医療機器 X線機器 4 患者監視装置 5 ペースメーカー 6 血糖値測定器 7


    Original     		PDF VMN-MS6792-1304-ME VJ5301M

    VJ Hi-Rel

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Medical Medical Equipment One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components MED I CAL Medical Medical More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3.


    Original     		PDF SFH6732 VMN-MS6984-1410-ME VJ Hi-Rel