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    SI2309CDS Price and Stock

    Vishay Siliconix SI2309CDS-T1-GE3

    MOSFET P-CH 60V 1.6A SOT23-3
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    DigiKey SI2309CDS-T1-GE3 Digi-Reel 26,274 1
    • 1 $0.81
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    SI2309CDS-T1-GE3 Cut Tape 26,274 1
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    SI2309CDS-T1-GE3 Reel 24,000 3,000
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    RS SI2309CDS-T1-GE3 Bulk 3,000 50 Weeks 3,000
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    New Advantage Corporation SI2309CDS-T1-GE3 591,000 1
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    Vishay Siliconix SI2309CDS-T1-E3

    MOSFET P-CH 60V 1.6A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2309CDS-T1-E3 Cut Tape 10,707 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
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    SI2309CDS-T1-E3 Digi-Reel 10,707 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
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    SI2309CDS-T1-E3 Reel 9,000 3,000
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    RS SI2309CDS-T1-E3 Bulk 3,000
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    New Advantage Corporation SI2309CDS-T1-E3 159,000 1
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    Vishay Siliconix SI2309CDS-T1-BE3

    P-CHANNEL 60-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2309CDS-T1-BE3 Reel 6,000 3,000
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    Vishay Intertechnologies SI2309CDS-T1-E3

    Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2309CDS-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI2309CDS-T1-E3 Reel 39,000 13 Weeks 3,000
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    Mouser Electronics SI2309CDS-T1-E3 56,522
    • 1 $0.51
    • 10 $0.354
    • 100 $0.264
    • 1000 $0.207
    • 10000 $0.154
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    Verical SI2309CDS-T1-E3 20,786 33
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    Newark SI2309CDS-T1-E3 Reel 3,000
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    TTI SI2309CDS-T1-E3 Reel 3,000
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    Avnet Asia SI2309CDS-T1-E3 15 Weeks 3,000
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    Chip1Stop SI2309CDS-T1-E3 Cut Tape 20,786
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    • 100 $0.277
    • 1000 $0.191
    • 10000 $0.143
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    EBV Elektronik SI2309CDS-T1-E3 14 Weeks 3,000
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    Vishay Intertechnologies SI2309CDS-T1-BE3

    Transistor MOSFET P-CH 60V 1.6A 3-Pin SOT-23 (Alt: SI2309CDS-T1-BE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI2309CDS-T1-BE3 18,000 13 Weeks 3,000
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    Mouser Electronics SI2309CDS-T1-BE3 198,267
    • 1 $0.61
    • 10 $0.409
    • 100 $0.262
    • 1000 $0.179
    • 10000 $0.146
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    Verical SI2309CDS-T1-BE3 6,000 3,000
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    Arrow Electronics SI2309CDS-T1-BE3 6,000 13 Weeks 3,000
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    Newark SI2309CDS-T1-BE3 Bulk 3,000
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    Bristol Electronics SI2309CDS-T1-BE3 3,000
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    Quest Components SI2309CDS-T1-BE3 2,400
    • 1 $0.966
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    • 100 $0.966
    • 1000 $0.2898
    • 10000 $0.1932
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    TTI SI2309CDS-T1-BE3 Reel 117,000 3,000
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    • 10000 $0.132
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    Avnet Asia SI2309CDS-T1-BE3 15 Weeks 3,000
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    EBV Elektronik SI2309CDS-T1-BE3 14 Weeks 3,000
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    SI2309CDS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2309CDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 1.6A SOT23-3 Original PDF
    SI2309CDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 1.6A SOT23-3 Original PDF

    SI2309CDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2309CDS

    Abstract: marking code vishay SILICONIX sot-23
    Text: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available


    Original
    PDF Si2309CDS O-236 OT-23) Si2309CDS-T1-E3 Si2309CDS-T1-GE3 11-Mar-11 marking code vishay SILICONIX sot-23

    Si2309CDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si2309CDS 18-Jul-08

    Si2309CDS

    Abstract: Si2309DS si2309cdst1e3 Si2309CDS-T1-GE3 si2309cds-t1-e3 T1 diode Si2309DS-T1 SI2309DST1E3
    Text: Specification Comparison Vishay Siliconix Si2309CDS vs. Si2309DS Description: Package: Pin Out: P-Channel, 60-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2309CDS-T1-GE3 replaces Si2309DS-T1-GE3 Si2309CDS-T1-E3 or Si2309CDS-T1-GE3 replaces Si2309DS-T1


    Original
    PDF Si2309CDS Si2309DS OT-23 Si2309CDS-T1-GE3 Si2309DS-T1-GE3 Si2309CDS-T1-E3 Si2309DS-T1 si2309cdst1e3 T1 diode SI2309DST1E3

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available


    Original
    PDF Si2309CDS O-236 OT-23) Si2309CDS-T1-E3 Si2309CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    SI2309cds-t1

    Abstract: Si2309CDS tjm sot23
    Text: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available


    Original
    PDF Si2309CDS O-236 OT-23) Si2309CDS-T1-E3 Si2309CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SI2309cds-t1 tjm sot23

    AN609

    Abstract: Si2309CDS
    Text: Si2309CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    PDF Si2309CDS AN609, 21-Oct-08 AN609

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2309CDS www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original
    PDF Si2309CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    mosfet marking code N9

    Abstract: Si2309CDS Si2309CDS-T1-E3
    Text: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available


    Original
    PDF Si2309CDS O-236 OT-23) Si2309CDS-T1-E3 Si2309CDS-T1-GE3 18-Jul-08 mosfet marking code N9

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available


    Original
    PDF Si2309CDS O-236 OT-23) Si2309CDS-T1-E3 Si2309CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available


    Original
    PDF Si2309CDS O-236 OT-23) Si2309CDS-T1-E3 Si2309CDS-T1-GE3 11-Mar-11

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    thermistor type R53

    Abstract: No abstract text available
    Text: User's Guide SLVU912 – June 2013 TPS65310AEVM and TPS65311EVM Evaluation Module TI's TPS65310AEVM and TPS65311EVM evaluation modules EVM help engineers evaluate the operation and performance of the TPS65310A and TPS65311 power supply IC for safety applications. The


    Original
    PDF SLVU912 TPS65310AEVM TPS65311EVM TPS65310A TPS65311 TPS65310AQRVJQ1 thermistor type R53

    SiB431EDK

    Abstract: No abstract text available
    Text: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,


    Original
    PDF LLP1010-6L LLP75-6L VEMI45AC-HNH VEMI65AC-HCI LLP2513-13L VEMI85AC-HGK LLP1713-9L LLP3313-17L SiB431EDK

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477