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    SI4662DY Price and Stock

    Vishay Intertechnologies SI4662DY-T1-E3

    MOSFETs 30V 18.6A 6.25W
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    Mouser Electronics SI4662DY-T1-E3
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    Vishay Intertechnologies SI4662DY-T1-GE3

    MOSFETs 30V 18.6A 6.25W 10mohm @ 10V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI4662DY-T1-GE3
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    • 10 -
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    SI4662DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4662DY

    Abstract: No abstract text available
    Text: New Product Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 11 nC RoHS APPLICATIONS


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    Si4662DY Si4662DY-T1-E3 08-Apr-05 PDF

    74685

    Abstract: 3595 AN609 Si4662DY
    Text: Si4662DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    Si4662DY AN609 09-May-07 74685 3595 PDF

    Si4662DY

    Abstract: a3546 v536
    Text: SPICE Device Model Si4662DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si4662DY 18-Jul-08 a3546 v536 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 11 nC RoHS APPLICATIONS


    Original
    Si4662DY Si4662DY-T1-E3 18-Jul-08 PDF

    a3546

    Abstract: Si4662DY V536
    Text: SPICE Device Model Si4662DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4662DY S-71391Rev. 16-Jul-07 a3546 V536 PDF

    si4662

    Abstract: No abstract text available
    Text: Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    Si4662DY Si4662DY-T1-E3 Si4662DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4662 PDF

    Si4662DY

    Abstract: No abstract text available
    Text: Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    Si4662DY Si4662DY-T1-E3 Si4662DY-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    Si4662DY Si4662DY-T1-E3 Si4662DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


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    Si4662DY Si4662DY-T1-E3 Si4662DY-T1-GE3 11-Mar-11 PDF

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04 PDF