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    SI4913DY Price and Stock

    Vishay Siliconix SI4913DY-T1-E3

    MOSFET 2P-CH 20V 7.1A 8SOIC
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    DigiKey SI4913DY-T1-E3 Digi-Reel 1
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    SI4913DY-T1-E3 Cut Tape
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    Vishay Siliconix SI4913DY-T1-GE3

    MOSFET 2P-CH 20V 7.1A 8SOIC
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    SI4913DY-T1-GE3 Digi-Reel 1
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    Vishay Siliconix SI4913DY

    Transistor
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    SI4913DY Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4913DY Vishay Siliconix MOSFETs Original PDF
    SI4913DY Vishay Telefunken Dual P-Channel 20-V (D-S) MOSFET Original PDF
    Si4913DY SPICE Device Model Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF
    SI4913DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 7.1A 8-SOIC Original PDF
    SI4913DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 7.1A 8-SOIC Original PDF

    SI4913DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 5929 transistor

    Abstract: AN609 Si4913DY
    Text: Si4913DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4913DY AN609 19-Mar-07 c 5929 transistor

    Si4913DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4913DY S-52287Rev. 31-Oct-05

    Untitled

    Abstract: No abstract text available
    Text: Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4913DY 2002/95/EC Si4913DY-T1-E3 Si4913DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4913DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • TrenchFET Power MOSFET • Advanced High Cell Density Process


    Original
    PDF Si4913DY Si4913DY-T1 Si4913DY-T1-E3 18-Jul-08

    Si4913DY-T1-E3

    Abstract: Si4913DY SI4913DY-T1-GE3
    Text: Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4913DY 2002/95/EC Si4913DY-T1-E3 Si4913DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4913DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -9.4 APPLICATIONS 0.019 @ VGS = -2.5 V - 8.4


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    PDF Si4913DY 08-Apr-05

    21683

    Abstract: SI4913DY
    Text: Si4913DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -9.4 APPLICATIONS 0.019 @ VGS = -2.5 V - 8.4


    Original
    PDF Si4913DY S-21683--Rev. 30-Sep-02 21683

    Si4913DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4913DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4913DY 2002/95/EC Si4913DY-T1-E3 Si4913DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4913DY

    Abstract: No abstract text available
    Text: Si4913DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -9.4 APPLICATIONS 0.019 @ VGS = -2.5 V - 8.4


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    PDF Si4913DY S-22122--Rev. 25-Nov-02

    Untitled

    Abstract: No abstract text available
    Text: Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 - 20 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition


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    PDF Si4913DY 2002/95/EC Si4913DY-T1-E3 Si4913DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4913DY-T1-GE3

    Abstract: SI4913DY-T1-E3
    Text: Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4913DY 2002/95/EC Si4913DY-T1-E3 Si4913DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4913DY

    Abstract: mosfet SPICE MODEL
    Text: SPICE Device Model Si4913DY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4913DY 25-Mar-03 mosfet SPICE MODEL

    Si4913DY-T1-E3

    Abstract: Si4913DY Si4913DY-T1
    Text: Si4913DY Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 9.4 0.019 at VGS = - 2.5 V - 8.4 0.024 at VGS = - 1.8 V - 7.5 • TrenchFET Power MOSFET • Advanced High Cell Density Process


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    PDF Si4913DY Si4913DY-T1 Si4913DY-T1-E3 08-Apr-05

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477