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Vishay Siliconix SI5458DU-T1-GE3 MOSFET N-CH 30V 6A CHIPFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5458DU-T1-GE3	Digi-Reel			1	1 $0.95 10 $0.95 100 $0.95 1000 $0.95 10000 $0.95	Buy Now
	SI5458DU-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.2321	Buy Now
	SI5458DU-T1-GE3	Cut Tape			1	1 $0.95 10 $0.95 100 $0.95 1000 $0.95 10000 $0.95	Buy Now
Vishay Intertechnologies SI5458DU-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI5458DU-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI5458DU-T1-GE3	Reel		17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1845	Buy Now
Mouser Electronics	SI5458DU-T1-GE3		10,073			1 $0.97 10 $0.969 100 $0.969 1000 $0.291 10000 $0.187	Buy Now
Newark	SI5458DU-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 $0.284 10000 $0.284	Buy Now
TTI	SI5458DU-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.191	Buy Now

SI5458DU Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI5458DU-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6A PPAK CHIPFET		Original	PDF

SI5458DU Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
si5458 Abstract: No abstract text available Text: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si5458DU 2002/95/EC Si5458DU-T1-GE3 18-Jul-08 si5458
Untitled Abstract: No abstract text available Text: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si5458DU 2002/95/EC Si5458DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si5458DU 2002/95/EC Si5458DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SPICE Device Model Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	PDF	Si5458DU 18-Jul-08
si5458 Abstract: No abstract text available Text: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si5458DU 2002/95/EC Si5458DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si5458
Untitled Abstract: No abstract text available Text: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si5458DU 2002/95/EC Si5458DU-T1-GE3 11-Mar-11
AN609 Abstract: 228-2529 Text: Si5458DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si5458DU AN609, 22-Jul-09 AN609 228-2529
Untitled Abstract: No abstract text available Text: SPICE Device Model Si5458DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	PDF	Si5458DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
MARKING CODE AP Abstract: No abstract text available Text: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si5458DU 2002/95/EC Si5458DU-T1-GE3 11-Mar-11 MARKING CODE AP
Untitled Abstract: No abstract text available Text: New Product Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.041 at VGS = 10 V 6 0.051 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si5458DU 2002/95/EC Si5458DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: V i s h ay I n te r tec h n olo g y, I n c . Power mosfets Powe rPA K ChipFET® M O S F E ts Product Sheet 3 W Maximum Power Dissipation in Compact 3 mm x 1.8 mm Footprint Area: Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints	Original	PDF	VMN-PT0102-1007
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	PDF	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Si542 Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline PowerPAK ChipFET® Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints Key Benefits • Advanced thermal performance in a compact 3 mm by 1.8 mm footprint	Original	PDF	Si5936DU Si5944DU Si5999EDU Si5997DU Si5517DU VMN-PT0102-1402 Si542
SI5517 Abstract: si5459 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – 3 W Maximum PD in Compact 3 mm x 1.8 mm Outline AND TEC I INNOVAT O L OGY PowerPAK ChipFET® N HN POWER MOSFETs O 19 62-2012 Replace TSOP-6 and SO-8 MOSFETs for Lower Thermal Resistance and Smaller Footprints	Original	PDF	Si5517DU VMN-PT0102-1209 SI5517 si5459

Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	PDF	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477