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    SI5933DC Search Results

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    SI5933DC Price and Stock

    Vishay Siliconix SI5933DC-T1-E3

    MOSFET 2P-CH 20V 2.7A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5933DC-T1-E3 Digi-Reel 1
    • 1 $2.84
    • 10 $2.84
    • 100 $2.84
    • 1000 $2.84
    • 10000 $2.84
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    SI5933DC-T1-E3 Cut Tape 1
    • 1 $2.84
    • 10 $2.84
    • 100 $2.84
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    • 10000 $2.84
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    SI5933DC-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.85
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    RS SI5933DC-T1-E3 Bulk 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $1.6
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    Vishay Intertechnologies SI5933DC-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI5933DC-T1 1,090 3
    • 1 -
    • 10 $1.6875
    • 100 $1.4062
    • 1000 $0.7425
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    Quest Components SI5933DC-T1 872
    • 1 $3
    • 10 $3
    • 100 $3
    • 1000 $0.9375
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    Vishay Siliconix SI5933DC-T1

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    Bristol Electronics SI5933DC-T1 440 3
    • 1 -
    • 10 $1.6875
    • 100 $1.4062
    • 1000 $0.7875
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    Quest Components SI5933DC-T1 352
    • 1 $3
    • 10 $3
    • 100 $3
    • 1000 $0.975
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    Vishay Intertechnologies SI5933DC-T1-E3

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.7A I(D), P-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI5933DC-T1-E3 3,000
    • 1 $3.06
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    • 100 $3.06
    • 1000 $3.06
    • 10000 $1.071
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    SI5933DC-T1-E3 3,000
    • 1 $3.06
    • 10 $3.06
    • 100 $3.06
    • 1000 $3.06
    • 10000 $1.071
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    SI5933DC Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si5933DC Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5933DC Vishay Siliconix MOSFETs Original PDF
    SI5933DC-DS Vishay Telefunken DS-Spice Model for Si5933DC Original PDF
    Si5933DC SPICE Device Model Vishay Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5933DC-T1 Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5933DC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 2.7A 1206-8 Original PDF
    SI5933DC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 2.7A 1206-8 Original PDF

    SI5933DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21


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    PDF Si5933DC 2002/95/EC Si5933DC-T1-E3 Si5933DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21


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    PDF Si5933DC 2002/95/EC Si5933DC-T1-E3 Si5933DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si5933DC

    Abstract: No abstract text available
    Text: Si5933DC New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.110 @ VGS = –4.5 V –3.6 0.160 @ VGS = –2.5 V –3.0 0.240 @ VGS = –1.8 V –2.4 S1 S2 1206-8 ChipFET 1 S1 D1 G1 G1 D1 G2 S2


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    PDF Si5933DC S-01375--Rev. 26-Jun-00

    Si5933DC

    Abstract: Si5933DC-T1-E3
    Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si5933DC 2002/95/EC Si5933DC-T1-E3 Si5933DC-T1-GE3 18-Jul-08

    74028

    Abstract: AN609 Si5933DC
    Text: Si5933DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si5933DC AN609 27-Jun-07 74028

    Si5933DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si5933DC 18-Jul-08

    Si5933DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si5933DC S-60073Rev. 23-Jan-06

    Si5933DC

    Abstract: Si5933DC-T1 "MARKING CODE G2"
    Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFET D 1.8-V Rated Qg (Typ)


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    PDF Si5933DC Si5933DC-T1 Si5933DC-T1--E3 08-Apr-05 "MARKING CODE G2"

    ChipFET

    Abstract: Si5933DC Si5933DC-T1
    Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = -4.5 V -3.6 -20 0.160 @ VGS = -2.5 V -3.0 0.240 @ VGS = -1.8 V -2.4 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code


    Original
    PDF Si5933DC Si5933DC-T1 S-21251--Rev. 05-Aug-02 ChipFET

    VISHAY MARKING S10 SMA

    Abstract: No abstract text available
    Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21


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    PDF Si5933DC 2002/95/EC Si5933DC-T1-E3 Si5933DC-T1-GE3 11-Mar-11 VISHAY MARKING S10 SMA

    Si5933DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si5933DC netwo10V, 28-Mar-03

    Untitled

    Abstract: No abstract text available
    Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 S1 S2 1206-8 ChipFETr 1 S1 D1 G1 G1 D1 G2 S2 D2 Marking Code


    Original
    PDF Si5933DC Si5933DC-T1 Si5933DC-T1--E3 S-40932--Rev. 17-May-04

    Si5933DC

    Abstract: Si5933DC-T1
    Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFET D 1.8-V Rated Qg (Typ)


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    PDF Si5933DC Si5933DC-T1 Si5933DC-T1--E3 18-Jul-08

    Specification Comparison

    Abstract: SI5933CD Si5933DC Si5933DC-T1 Si5933DC-T1-E3 SI5933CDC
    Text: Specification Comparison Vishay Siliconix Si5933CDC vs. Si5933DC Description: Package: Pin Out: Dual N-Channel 20-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5933CDC-T1-E3 replaces Si5933DC-T1-E3 Si5933CDC-T1-E3 replaces Si5933DC-T1


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    PDF Si5933CDC Si5933DC Si5933CDC-T1-E3 Si5933DC-T1-E3 Si5933DC-T1 06-Aug-08 Specification Comparison SI5933CD

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


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    PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    Untitled

    Abstract: No abstract text available
    Text: 19-0810; Rev 0; 4/07 Overvoltage Protectors with External pFET Features The MAX4923MAX4926 overvoltage protection OVP controllers protect low-voltage systems against high-voltage faults of up to +28V with an appropriate external pFET. When the input voltage exceeds the overvoltage lockout (OVLO) threshold, or falls below the


    Original
    PDF MAX4923â MAX4926 MAX4923) MAX4924) MAX4925) MAX4926) MAX4926

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


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    PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    446V

    Abstract: MAX4923 L611 to control
    Text: 19-0810; Rev 0; 4/07 Overvoltage Protectors with External pFET Features The MAX4923MAX4926 overvoltage protection OVP controllers protect low-voltage systems against high-voltage faults of up to +28V with an appropriate external pFET. When the input voltage exceeds the overvoltage lockout (OVLO) threshold, or falls below the


    Original
    PDF MAX4923 MAX4926 MAX4923) MAX4924) MAX4925) MAX4926) MAX4926 446V L611 to control