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Vishay Siliconix SI6469DQ-T1-E3 MOSFET P-CH 8V 8TSSOP
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DigiKey	SI6469DQ-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.8375	Buy Now
Vishay Siliconix SI6469DQ-T1-GE3 MOSFET P-CH 8V 8TSSOP
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DigiKey	SI6469DQ-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI6469DQ-T1-GE3 MOSFETs 8.0V 6.0A 1.5W 28mohm @ 4.5V
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Mouser Electronics	SI6469DQ-T1-GE3					1 - 10 - 100 - 1000 - 10000 $0.525	Get Quote

SI6469DQ Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si6469DQ		Vishay Intertechnology	Dual P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI6469DQ		Vishay Siliconix	MOSFETs		Original	PDF
Si6469DQ SPICE Device Model		Vishay	Dual P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI6469DQ-T1		Vishay Intertechnology	Dual P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI6469DQ-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 8TSSOP		Original	PDF
SI6469DQ-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 8TSSOP		Original	PDF

SI6469DQ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
A 1469 mosfet Abstract: AN609 Si6469DQ Text: Si6469DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si6469DQ AN609 29-Jun-07 A 1469 mosfet	PDF
Si6469DQ Abstract: No abstract text available Text: SPICE Device Model Si6469DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si6469DQ S-52517Rev. 12-Dec-05	PDF
Si6469DQ Abstract: No abstract text available Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 8 –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S	Original	Si6469DQ S-60717--Rev. 01-Feb-99	PDF
Untitled Abstract: No abstract text available Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 8 –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S	Original	Si6469DQ 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated	Original	Si6469DQ Si6469DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si6469DQ Abstract: No abstract text available Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated	Original	Si6469DQ Si6469DQ-T1-GE3 18-Jul-08	PDF
Si6469DQ Abstract: No abstract text available Text: SPICE Device Model Si6469DQ Dual P-Channel 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	Si6469DQ	PDF
Untitled Abstract: No abstract text available Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated	Original	Si6469DQ Si6469DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si6469DQ Abstract: No abstract text available Text: SPICE Device Model Si6469DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si6469DQ 18-Jul-08	PDF
Si6469DQ Abstract: No abstract text available Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated	Original	Si6469DQ Si6469DQ-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.028 @ VGS = –4.5 V "6.0 0.031 @ VGS = –3.3 V "5.8 0.040 @ VGS = –2.5 V "5.0 0.065 @ VGS = –1.8 V "3.6 S TSSOP-8 D 1 S 2 S 3 G 4 D Si6469DQ	Original	Si6469DQ S-60717--Rev. 01-Feb-99	PDF
Si6469DQ Abstract: No abstract text available Text: SPICE Device Model Si6469DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si6469DQ 30-Apr-01	PDF
Untitled Abstract: No abstract text available Text: Si6469DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.028 at VGS = - 4.5 V ± 6.0 0.031 at VGS = - 3.3 V ± 5.8 0.040 at VGS = - 2.5 V ± 5.0 0.065 at VGS = - 1.8 V ± 3.6 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated	Original	Si6469DQ Si6469DQ-T1-GE3 08-Apr-05	PDF
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05	PDF

GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8	PDF
si5480 Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT	Original	Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3	PDF