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    SI8499DB Price and Stock

    Vishay Intertechnologies SI8499DB-T2-E1

    Trans MOSFET P-CH 20V 7.8A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8499DB-T2-E1)
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    Avnet Americas SI8499DB-T2-E1 Reel 18 Weeks 3,000
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    Mouser Electronics SI8499DB-T2-E1 15,000
    • 1 $0.73
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    Verical SI8499DB-T2-E1 6,000 3,000
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    Arrow Electronics SI8499DB-T2-E1 6,000 18 Weeks 3,000
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    Newark SI8499DB-T2-E1 Reel 3,000
    • 1 $0.263
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    SI8499DB-T2-E1 Cut Tape 3,000
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    Bristol Electronics SI8499DB-T2-E1 19,649
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    Quest Components SI8499DB-T2-E1 14,400
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    SI8499DB-T2-E1 12,000
    • 1 $0.665
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    TTI SI8499DB-T2-E1 Reel 3,000
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    Avnet Asia SI8499DB-T2-E1 20 Weeks 3,000
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    Component Electronics, Inc SI8499DB-T2-E1 10
    • 1 $0.77
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    EBV Elektronik SI8499DB-T2-E1 22 Weeks 3,000
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    Vishay Intertechnologies SI8499DB-E1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI8499DB-E1 3,000
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    Vishay Siliconix SI8499DB-T2-E1

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    Bristol Electronics SI8499DB-T2-E1 2,110 13
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    Quest Components SI8499DB-T2-E1 1,688
    • 1 $0.55
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    • 1000 $0.165
    • 10000 $0.143
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    SI8499DB-T2-E1 1,658
    • 1 $0.36
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    • 1000 $0.168
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    New Advantage Corporation SI8499DB-T2-E1 6,000 1
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    SI8499DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8499DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 16A MICROFOOT Original PDF

    SI8499DB Datasheets Context Search

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    mosfet 2891

    Abstract: No abstract text available
    Text: SPICE Device Model Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8499DB 18-Jul-08 mosfet 2891

    Untitled

    Abstract: No abstract text available
    Text: Si8499DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () ID (A) e 0.032 at VGS = -4.5 V -16 0.046 at VGS = -2.5 V -14.3 0.065 at VGS = -2.0 V -12 0.120 at VGS = -1.8 V -2.5 MICRO FOOT 1.5 x 1


    Original     		PDF Si8499DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) - 20 0.032 at VGS = - 4.5 V - 16 0.046 at VGS = - 2.5 V - 14.3 0.065 at VGS = - 2.0 V - 12 0.120 at VGS = - 1.8 V - 2.5 Qg (Typ.) 14.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8499DB 2002/95/EC 18-Jul-08

    mosfet 4414

    Abstract: AN609 Si8499DB si84
    Text: Si8499DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si8499DB AN609, 02-Mar-10 mosfet 4414 AN609 si84

    SI8499DB-T2-E1

    Abstract: Si8499DB si8499
    Text: Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) - 20 0.032 at VGS = - 4.5 V - 16 0.046 at VGS = - 2.5 V - 14.3 0.065 at VGS = - 2.0 V - 12 0.120 at VGS = - 1.8 V - 2.5 Qg (Typ.) 14.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8499DB 2002/95/EC 18-Jul-08 SI8499DB-T2-E1 si8499

    SI8499DBT2E1

    Abstract: No abstract text available
    Text: Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) - 20 0.032 at VGS = - 4.5 V - 16 0.046 at VGS = - 2.5 V - 14.3 0.065 at VGS = - 2.0 V - 12 0.120 at VGS = - 1.8 V - 2.5 Qg (Typ.) 14.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8499DB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI8499DBT2E1

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8499DB www.vishay.com Vishay Siliconix DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8499DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SiB431EDK

    Abstract: No abstract text available
    Text: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,


    Original     		PDF LLP1010-6L LLP75-6L VEMI45AC-HNH VEMI65AC-HCI LLP2513-13L VEMI85AC-HGK LLP1713-9L LLP3313-17L SiB431EDK

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402