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    Vishay Siliconix SIHFBF30S-GE3

    MOSFET N-CHANNEL 900V
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    DigiKey SIHFBF30S-GE3 Cut Tape 921 1
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    SIHFBF30S-GE3 Reel 1,000
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    SIHFBF30S-GE3 Digi-Reel 1
    • 1 $2.61
    • 10 $1.681
    • 100 $2.61
    • 1000 $0.92634
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    Vishay Intertechnologies SIHFBF30S-GE3

    MOSFET N-CHANNEL 900V - Tape and Reel (Alt: SIHFBF30S-GE3)
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    Avnet Americas SIHFBF30S-GE3 Reel 12 Weeks 1,000
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    Mouser Electronics SIHFBF30S-GE3 930
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    TTI SIHFBF30S-GE3 Reel 8,000 1,000
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    SIHFBF30S-GE3 Reel 1,000
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    TME SIHFBF30S-GE3 1
    • 1 $1.94
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    EBV Elektronik SIHFBF30S-GE3 13 Weeks 50
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    SIHFBF30 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFBF30

    Abstract: SiHFBF30 SiHFBF30-E3
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBF30 SiHFBF30-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    irfbf30

    Abstract: SiHFBF30 SiHFBF30-E3
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements


    Original     		IRFBF30, SiHFBF30 O-220 O-220 18-Jul-08 irfbf30 SiHFBF30-E3 PDF

    AN609

    Abstract: IRFBF30 SiHFBF30
    Text: IRFBF30_RC, SiHFBF30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFBF30 SiHFBF30 AN609, 20-Apr-10 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements


    Original     		IRFBF30, SiHFBF30 O-220 O-220 12-Mar-07 PDF

    IRFBF30S

    Abstract: IRFBF30SPBF SiHFBF30S SiHFBF30S-E3
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling Qgd (nC) 42


    Original     		IRFBF30S, SiHFBF30S 2002/95/EC O-263) 18-Jul-08 IRFBF30S IRFBF30SPBF SiHFBF30S-E3 PDF

    mosfet 9452

    Abstract: SiHFBF30S AN609 IRFBF30S
    Text: IRFBF30S_RC, SiHFBF30S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFBF30S SiHFBF30S AN609, 20-Apr-10 mosfet 9452 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    SiHFBF30S

    Abstract: No abstract text available
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original     		IRFBF30S, SiHFBF30S 2002/95/EC O-263) 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    SiHFBF30S

    Abstract: No abstract text available
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original     		IRFBF30S, SiHFBF30S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFBF30

    Abstract: SiHFBF30 SiHFBF30-E3
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements


    Original     		IRFBF30, SiHFBF30 O-220 O-220 18-Jul-08 IRFBF30 SiHFBF30-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original     		IRFBF30S, SiHFBF30S 2002/95/EC O-263) 11-Mar-11 PDF

    SiHFBF30S

    Abstract: No abstract text available
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original     		IRFBF30S, SiHFBF30S 2002/95/EC O-263) 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    SiHFBF30S

    Abstract: No abstract text available
    Text: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements


    Original     		IRFBF30S, SiHFBF30S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF