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Catalog Datasheet	MFG & Type	PDF	Document Tags
SiHFIZ48G Abstract: No abstract text available Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIZ48G, SiHFIZ48G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFIZ48G Abstract: SiHFIZ48G SiHFIZ48G-E3 Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIZ48G, SiHFIZ48G O-220 18-Jul-08 IRFIZ48G SiHFIZ48G-E3
SiHFIZ48G Abstract: No abstract text available Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIZ48G, SiHFIZ48G O-220 12-Mar-07
SiHFIZ48G Abstract: No abstract text available Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIZ48G, SiHFIZ48G O-220 O-22emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SiHFIZ48G Abstract: IRFIZ48G SiHFIZ48G-E3 Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIZ48G, SiHFIZ48G O-220 18-Jul-08 IRFIZ48G SiHFIZ48G-E3
SiHFIZ48G Abstract: No abstract text available Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIZ48G, SiHFIZ48G O-220 11-Mar-11
SiHFIZ48G Abstract: No abstract text available Text: IRFIZ48G, SiHFIZ48G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.018 Qg (Max.) (nC) 110 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIZ48G, SiHFIZ48G O-220 O-22electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
4148 Abstract: diode t 4148 AN609 IRFIZ48G SiHFIZ48G Text: IRFIZ48G_RC, SiHFIZ48G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFIZ48G SiHFIZ48G AN609, 31-May-10 4148 diode t 4148 AN609