n 332 ab
Abstract: IRL520
Text: IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • Logic-Level Gate Drive
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IRL520,
SiHL520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
n 332 ab
IRL520
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Untitled
Abstract: No abstract text available
Text: IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • Logic-Level Gate Drive
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PDF
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IRL520,
SiHL520
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • Logic-Level Gate Drive
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Original
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PDF
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IRL520,
SiHL520
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • Logic-Level Gate Drive
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Original
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PDF
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IRL520,
SiHL520
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
IRL520
Abstract: No abstract text available
Text: IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • Logic-Level Gate Drive
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Original
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PDF
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IRL520,
SiHL520
O-220
O-220
18-Jul-08
IRL520
|
Untitled
Abstract: No abstract text available
Text: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single DESCRIPTION D D2PAK Third generation Power MOSFETs from Vishay provide the
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PDF
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IRL520S,
SiHL520S
O-263)
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () VGS = 5 V 0.27 • Dynamic dV/dt Rating Qg (Max.) (nC) 12 Qgs (nC) 3.0 • Repetitive Avalanche Rated
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Original
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PDF
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IRL520L,
SiHL520L
O-262)
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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AN609
Abstract: IRL520
Text: IRL520_RC, SiHL520_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRL520
SiHL520
AN609,
5688m
0716m
9201m
5574m
5597m
0464m
2863m
AN609
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IRL520L
Abstract: No abstract text available
Text: IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () VGS = 5 V 0.27 • Dynamic dV/dt Rating Qg (Max.) (nC) 12 Qgs (nC) 3.0 • Repetitive Avalanche Rated
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Original
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PDF
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IRL520L,
SiHL520L
2002/95/EC
O-262)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRL520L
|
IRL520
Abstract: No abstract text available
Text: IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • Logic-Level Gate Drive
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Original
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PDF
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IRL520,
SiHL520
O-220
O-220
18-Jul-08
IRL520
|
IRL520
Abstract: No abstract text available
Text: IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • Logic-Level Gate Drive
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Original
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PDF
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IRL520,
SiHL520
2002/95/EC
O-220AB
11-Mar-11
IRL520
|
Untitled
Abstract: No abstract text available
Text: IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • Logic-Level Gate Drive
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Original
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PDF
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IRL520,
SiHL520
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single DESCRIPTION D D2PAK Third generation Power MOSFETs from Vishay provide the
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Original
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PDF
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IRL520S,
SiHL520S
O-263)
11-Mar-11
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IRL520S
Abstract: No abstract text available
Text: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single DESCRIPTION D D2PAK Third generation Power MOSFETs from Vishay provide the
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Original
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PDF
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IRL520S,
SiHL520S
O-263)
18-Jul-08
IRL520S
|
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Untitled
Abstract: No abstract text available
Text: IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • Logic-Level Gate Drive
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Original
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PDF
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IRL520,
SiHL520
2002/95/EC
O-220AB
O-220AB
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: IRL520L, SiHL520L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition 100 RDS(on) () VGS = 5 V 0.27 • Dynamic dV/dt Rating Qg (Max.) (nC) 12 Qgs (nC) 3.0 • Repetitive Avalanche Rated
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Original
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PDF
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IRL520L,
SiHL520L
2002/95/EC
O-262)
11-Mar-11
|
IRL520
Abstract: No abstract text available
Text: IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • Logic-Level Gate Drive
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Original
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PDF
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IRL520,
SiHL520
O-220
O-220
12-Mar-07
IRL520
|
Untitled
Abstract: No abstract text available
Text: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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Original
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IRL520S,
SiHL520S
SMD-220
18-Jul-08
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