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Vishay Siliconix SIS406DN-T1-GE3 MOSFET N-CH 30V 9A PPAK1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIS406DN-T1-GE3	Digi-Reel	10,729		1	1 $1.19 10 $0.748 100 $1.19 1000 $0.34642 10000 $0.34642	Buy Now
	SIS406DN-T1-GE3	Cut Tape	10,729		1	1 $1.19 10 $0.748 100 $1.19 1000 $0.34642 10000 $0.34642	Buy Now
	SIS406DN-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.30143	Buy Now
Vishay Intertechnologies SIS406DN-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIS406DN-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIS406DN-T1-GE3	Reel		17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.27163	Buy Now
Mouser Electronics	SIS406DN-T1-GE3		111,078			1 $0.87 10 $0.62 100 $0.286 1000 $0.257 10000 $0.256	Buy Now
Arrow Electronics	SIS406DN-T1-GE3	Cut Strips	2	17 Weeks	1	1 $0.054 10 $0.054 100 $0.054 1000 $0.054 10000 $0.054	Buy Now
Newark	SIS406DN-T1-GE3	Cut Tape	3,532		1	1 $0.849 10 $0.691 100 $0.443 1000 $0.443 10000 $0.443	Buy Now
	SIS406DN-T1-GE3	Reel			3,000	1 $0.361 10 $0.361 100 $0.361 1000 $0.361 10000 $0.326	Buy Now
Bristol Electronics	SIS406DN-T1-GE3		2,743			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SIS406DN-T1-GE3		917			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Quest Components	SIS406DN-T1-GE3		2,194			1 $0.378 10 $0.378 100 $0.1701 1000 $0.1134 10000 $0.1134	Buy Now
	SIS406DN-T1-GE3		733			1 $0.454 10 $0.454 100 $0.2043 1000 $0.1362 10000 $0.1362	Buy Now
TTI	SIS406DN-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.253	Buy Now
TME	SIS406DN-T1-GE3		2,984		1	1 $0.762 10 $0.686 100 $0.545 1000 $0.509 10000 $0.509	Buy Now
EBV Elektronik	SIS406DN-T1-GE3			18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIS406DN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIS406DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A 1212-8 PPAK		Original	PDF

SIS406DN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®	Original	PDF	SiS406DN SiS406DN-T1-GE3 11-Mar-11
AN609 Abstract: SiS406DN Text: SiS406DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	SiS406DN AN609, 16-Jul-08 AN609
Untitled Abstract: No abstract text available Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®	Original	PDF	SiS406DN SiS406DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®	Original	PDF	SiS406DN SiS406DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SiS406DN Abstract: siliconix application notes Text: SPICE Device Model SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiS406DN S-82142 15-Sep-08 siliconix application notes
Untitled Abstract: No abstract text available Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®	Original	PDF	SiS406DN SiS406DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SiS406DN Abstract: No abstract text available Text: SPICE Device Model SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiS406DN 18-Jul-08
SiS406DN Abstract: sis406dn-t1-ge3 Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®	Original	PDF	SiS406DN SiS406DN-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®	Original	PDF	SiS406DN SiS406DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SPICE Device Model SiS406DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiS406DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
NPCE781BA0DX Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM	Original	PDF	512MB 64Mx16b C995R GPIO45 650ms NPCE781BA0DX nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
SCD1U50V3KX-GP Abstract: SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP Text: 5 4 3 2 1 D D SW 1 10 1 EJECT_BTN 3 5 2 4 SW -TACT-119-GP 62.40009.671 62.40012.101 C C B B A A mini BD Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title ODD EJT BTN Size Document Number Rev -2 JM41_MINI_BD	Original	PDF	-TACT-119-GP SKT-USB-295-GP G547F2P81U-GP SC4D7U16V5ZY-GP SCD1U50V3KX-GP 00PAD STFT236BR48H172-GP SCD1U50V3KX-GP SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	PDF	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

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SIS406DN Price and Stock

Vishay Siliconix SIS406DN-T1-GE3

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SIS406DN Datasheets (1)

SIS406DN Datasheets Context Search

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AN609

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SiS406DN

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SiS406DN

SiS406DN

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NPCE781BA0DX

si7121

SCD1U50V3KX-GP

Diode SOT-23 marking 15d