UPC1676G-T1
Abstract: UPC1676 16ANG UPC1676B UPC1676G UPC1676P mmic case styles
Text: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P 30 5.0 V • HIGH ISOLATION
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UPC1676B
UPC1676G
UPC1676P
UPC1676B,
UPC1676G)
UPC1676
UPC1676G-T1
UPC1676G-T1
16ANG
UPC1676B
UPC1676G
UPC1676P
mmic case styles
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UPC1676G-T1
Abstract: UPC1676 UPC1676B UPC1676G UPC1676P
Text: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P 30 5.0 V • HIGH ISOLATION
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UPC1676B
UPC1676G
UPC1676P
UPC1676B,
UPC1676G)
UPC1676
UPC1676G-T1
UPC1676G-T1
UPC1676B
UPC1676G
UPC1676P
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UPC1676B
Abstract: UPC1676 mmic s5 UPC1676G UPC1676P
Text: NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIM ENSIONS FEATURES Units in mm O UTLINE 39 (SOT-143) • W ID E BAND W IDTH: +02 1200 MHz TYP at 3 dB Point for UPC1676G 1300 MHz TYP at 3 dB Point for UPC1676B/P
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UPC1676B
UPC1676G
UPC1676P
UPC1676B/P
UPC1676
UPC1676G)
UPC1676B)
UPC1676P)
mmic s5
UPC1676P
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PC1676G
Abstract: No abstract text available
Text: 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G UPC1676P u p c i 6?6g NOISE FIGURE AND GAIN -• WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P
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UPC1676G
UPC1676B,
UPC1676P
UPC1676G)
UPC1676
UPC1676G-T1
PC1676G
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UPC1676B
Abstract: VCC 3802 Axis 210 UPC1676G
Text: N E C / CALIFORNIA SbE D • t.427414 0002bS0 334 » N E C C NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER — - T - 1 4 -13- 0 I OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E BANDW IDTH: 1200 MHz TYP at 3 dB Point for UPC1676G
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0002bS0
UPC1676B
UPC1676G
UPC1676P
OT-143)
UPC1676B/P
UPC1676
wide-ba107
VCC 3802
Axis 210
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Untitled
Abstract: No abstract text available
Text: NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E B A N D W ID T H : 1200 M H z T Y P at 3 dB Point for U P C 1676G 1300 M H z T Y P at 3 dB Point for U P C 16 7 6 B /P
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UPC1676B
UPC1676G
UPC1676P
OT-143)
1676G
UPC1676B,
UPC1676G,
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Untitled
Abstract: No abstract text available
Text: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz
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UPC1676G
UPC1676B,
UPC1676P
UPC1676G)
UPC1676B
UPC1676P
UPC1676
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UPC1676B
Abstract: No abstract text available
Text: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY FEATURES WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz
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UPC1676G
UPC1676B,
UPC1676P
UPC1676G)
UPC1676B
UPC1676P
UPC1676
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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transistor t06
Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX
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mmic a08
Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18
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Untitled
Abstract: No abstract text available
Text: 1.7 GHz MEDIUM POWER BROADBAND SILICON M M IC AMPLIFIER upG1677C UpG1677p UPC1677C INSERTION GAIN vs. FREQUENCY FEATURES_ • HIGH POWER OUTPUT: +19.5 dBm V C C -5 V • EXCELLENT FREQUENCY RESPONSE: 1.7 GHz TYP at 3 dB Down 40 30 • HIGH POWER GAIN: 24 dBtyp at 0.5 GHz
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upG1677C
UpG1677p
UPC1677C
UPC1677
UPC1677B
UPC1677C
UPC1677B,
UPC1677C,
UPC1677P
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