UPC1676G-T1
Abstract: UPC1676 16ANG UPC1676B UPC1676G UPC1676P mmic case styles
Text: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P 30 5.0 V • HIGH ISOLATION
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UPC1676B
UPC1676G
UPC1676P
UPC1676B,
UPC1676G)
UPC1676
UPC1676G-T1
UPC1676G-T1
16ANG
UPC1676B
UPC1676G
UPC1676P
mmic case styles
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UPC1676G-T1
Abstract: UPC1676 UPC1676B UPC1676G UPC1676P
Text: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P 30 5.0 V • HIGH ISOLATION
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UPC1676B
UPC1676G
UPC1676P
UPC1676B,
UPC1676G)
UPC1676
UPC1676G-T1
UPC1676G-T1
UPC1676B
UPC1676G
UPC1676P
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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C1A MARKING
Abstract: c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 LEADS 2, 3, 4 2 2.9 ± 0.2 0.95 3 1.9 0.85 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 0.8 0.16 +0.10
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NE02139
NE68039
NE68139
NE68539
NE68639
NE68739
NE68839
NE85639
UPC1675G
UPC1676G
C1A MARKING
c1a c1b c1c
marking C1C
NE68139
NE02139
NE68839
MARKING r4
ne85639
R47 marking
NE68039
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UPC1676B
Abstract: UPC1676 mmic s5 UPC1676G UPC1676P
Text: NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIM ENSIONS FEATURES Units in mm O UTLINE 39 (SOT-143) • W ID E BAND W IDTH: +02 1200 MHz TYP at 3 dB Point for UPC1676G 1300 MHz TYP at 3 dB Point for UPC1676B/P
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UPC1676B
UPC1676G
UPC1676P
UPC1676B/P
UPC1676
UPC1676G)
UPC1676B)
UPC1676P)
mmic s5
UPC1676P
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PC1676G
Abstract: No abstract text available
Text: 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G UPC1676P u p c i 6?6g NOISE FIGURE AND GAIN -• WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P
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UPC1676G
UPC1676B,
UPC1676P
UPC1676G)
UPC1676
UPC1676G-T1
PC1676G
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UPC1676B
Abstract: VCC 3802 Axis 210 UPC1676G
Text: N E C / CALIFORNIA SbE D • t.427414 0002bS0 334 » N E C C NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER — - T - 1 4 -13- 0 I OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E BANDW IDTH: 1200 MHz TYP at 3 dB Point for UPC1676G
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0002bS0
UPC1676B
UPC1676G
UPC1676P
OT-143)
UPC1676B/P
UPC1676
wide-ba107
VCC 3802
Axis 210
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Untitled
Abstract: No abstract text available
Text: NEC UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E B A N D W ID T H : 1200 M H z T Y P at 3 dB Point for U P C 1676G 1300 M H z T Y P at 3 dB Point for U P C 16 7 6 B /P
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UPC1676B
UPC1676G
UPC1676P
OT-143)
1676G
UPC1676B,
UPC1676G,
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Nec b 616
Abstract: UC1676 IC-1891
Text: • > DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT _/JPCi 676G GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The ,uPC1676G is a silicon m onolithic integrated circuit employing small package 4pins mini mold and designed for use as a wide band am plifier covers from HF band to UHF band.
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uPC1676G
Nec b 616
UC1676
IC-1891
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Untitled
Abstract: No abstract text available
Text: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz
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UPC1676G
UPC1676B,
UPC1676P
UPC1676G)
UPC1676B
UPC1676P
UPC1676
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UPC1676B
Abstract: No abstract text available
Text: UPC1676B UPC1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER UPC1676G NOISE FIGURE AND GAIN vs. FREQUENCY FEATURES WIDE BANDWIDTH: 1200 MHz at 3 dB Point for UPC1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P HIGH POWER GAIN: 22 dB TYP AT f = 500 MHz
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UPC1676G
UPC1676B,
UPC1676P
UPC1676G)
UPC1676B
UPC1676P
UPC1676
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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transistor t06
Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX
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mmic a08
Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18
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UPC1678
Abstract: UPC1678B
Text: UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES_ • HIGH OUTPUT POWER:+18 dBm • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 500 MHz
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UPC1678B
UPC1678G
UPC1678P
UPC1678G)
UPC1678
UPC1678B)
UPC1678B,
UPC1678G,
UPC1678P
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UPC1678B
Abstract: UPC167 UPC1678
Text: UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES • HIGH OUTPUT POWER: +18 dBm • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 500 MHz
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UPC1678B
UPC1678G
UPC1678P
UPC1678G)
UPC1678
UPC1678B)
UPC1678B,
UPC1678G,
UPC167
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upc1678
Abstract: UPC1678B
Text: 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER UPC1678G UPci678P UPC1678G NOISE FIGURE vs. FREQUENCY FEATURES_ • HIGH OUTPUT P O W E R :+18 dBm V cc • 5 V • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 0.5 GHz
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UPC1678G
UPci678P
UPC1678G)
UPC1678
UPC1678P
UPC1678B
UPC1678G-E
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