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Excelitas Technologies Corporation VTB6061JH Photo Diode; No. Of Pins:2Pins; Diode Case Style:To-8; Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:55°; Dark Current:2000Pa; Operating Temperature Min:-40°C; Operating Temperature Max:110°C; Product Range:- Rohs Compliant: Yes \|Excelitas Tech VTB6061JH
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Newark	VTB6061JH	Bulk			250	1 - 10 - 100 - 1000 - 10000 -	Buy Now

VTB6061J Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VTB6061J		PerkinElmer Optoelectronics	VTB Process Photodiode		Original	PDF
VTB6061J		EG&G	BLUE ENHANCED ULTRA HIGH DARK RESISTANCE		Scan	PDF
VTB6061J		EG&G Vactec	VTB Process Photodiodes		Scan	PDF
VTB6061J		EG&G Vactec	VTB Process Photodiodes		Scan	PDF

VTB6061J Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
VTB6061J Abstract: No abstract text available Text: VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to	Original	VTB6061J VTB6061J	PDF
VTB6061JH Abstract: D92-02 Text: VTB Process Photodiodes VTB6061JH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to	Original	VTB6061JH VTB6061JH D92-02	PDF
Untitled Abstract: No abstract text available Text: VTB Process Photodiodes VTB6061J PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to	Original	VTB6061J	PDF
Untitled Abstract: No abstract text available Text: VTB Process Photodiodes VTB6061JH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a “flat” window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to	Original	VTB6061JH	PDF
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383	PDF
VTB8440 Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue	Original	VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B	PDF
Untitled Abstract: No abstract text available Text: VTB6061J VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2} Large area planar silicon photodiode in a "flat” window, three lead TO-8 pack age. Chip is isolated from case. The	OCR Scan	VTB6061J VTBS061J	PDF
VTB6060J Abstract: VTB6061J Vactec 6061J Text: SbE D • 3030bCH 0DÜ1 ÜM7 DD3 VTB Process Photodiodes E G & G IVCT VTB6060J, 6061J VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a 'flat" w indow , three lead T O -8 pack	OCR Scan	3030bCH VTB6060J, 6061J T-41-51 VTB60oefficient 6x1012 x1013 VTB6060J VTB6061J Vactec 6061J	PDF
VTB6061J Abstract: No abstract text available Text: VTB Process Photodiodes V T B 6 0 6 1J PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C A S E 15A Large area p la n a rsilico n photodiode in a "fla t’ w indow , three lead T O -8 pack age. C h ip is isolated from case. Th e third lead allow s ca se to be grounded.	OCR Scan	VTB6061J VTB6061J	PDF
VTB6060 Abstract: 2X10 VTB6060J VTB6061J 6061J Text: SbE » • 3Q3DbDT 0001D147 0D3 VTB Process Photodiodes IVCT VTB6060J, 6061J E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a 'flat" window, three lead TO-8 pack age. Chip is isolated from case. The	OCR Scan	0001D147 VTB6060J, 6061J T-41-51 VTB6060J 1001c, x1013 VTB6060 2X10 VTB6060J VTB6061J 6061J	PDF