da 220 volts a 12 volt
Abstract: phototransistor visible light VTT1212 VTT1214
Text: SbE BOBObO^ Ü00117Ö bbfl ï> .040" NPN Phototransistors VTT1212, 1214 Clear T-1 3/4 Plastic Package E G & G V CT T-41-61 VACTEC PACKAGE DIMENSIONS inch mm 1 .0 0 ( 2 5 .4 ) .2 4 0 (6 .1 0 ) .2 2 0 ( 5 .5 9 ) ' .3 4 (B .6 ) I .1 7 (4 .3 ) .0 5 0 ( 1 .2 7 )
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VTT1212,
VTE12xx
100/IA
400fc
VTT1212
VTT1214
da 220 volts a 12 volt
phototransistor visible light
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Photodiode vactec
Abstract: bpw 50 VTD34 BPW 34
Text: SbE D • 3D3QbOcì 0001121 7ÔÔ * V C T V T D 3 4D S Rev. B SILICON PHOTODIODE J ^ E G a G VACTEC VTD34 OPTOELECTRONICS E BPW 34 INDUSTRY EQUIVALENT G 8c G V A C T E C T -4 1 -5 1 PRODUCT DESCRIPTION FEATURES • High sensitivity • Lo w capacitance •
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VTD34DS
VTD34
T-41-51
Photodiode vactec
bpw 50
VTD34
BPW 34
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transistor case To 106
Abstract: case to106 9013 transistor VTT9012 vtt9012 transistor h 9013 NPN 9013 VTT9013 TO-106 TRANSISTOR
Text: 3D3DbCH OGGllfiM Tbl 5bE V .050“ NPN Phototransistors Clear Epoxy TO-106 Ceramic Package VCT VTT9012, 9013 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS .5 0 .1 2 6 M AX. - | 3 .2 0 Inch (mm) ( 1 2 .7 ) ( 2 . 16) .0 6 5 M IN IM U M 1 <5 . 2 1 ) ( 4 .9 5 )
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O-106
VTT9012,
T-41-61
O-106
400fc
VTT9012
VTT9013
transistor case To 106
case to106
9013 transistor
vtt9012 transistor
h 9013
NPN 9013
TO-106 TRANSISTOR
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vactrol
Abstract: vactec vactrol vtl1a3 VTL1A3 vactec vactrol vtl1b5 Photoresistor neon lamp 220 volt VTL1A4 VTL186 lem HA
Text: ¡3 “ is Material FI HERMETIC SEALED VACTROL 2° C l VACTEC Copyrighted VACTEC P i Bulletin VTL-1 By Its Respective M A X IM U M RATINGS lOOmW — derate 2mW/’ C above 25°C case temperature — 55*C to -f- 70“C operating and storage Case temperature 4
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VTE5880
Abstract: No abstract text available
Text: 5bE D • 3D30bDT Daoigsa 431 M V C T GaAIAs Infrared Emitting Diodes VTE5880 T-1 3/4 5 mm Plastic Package — 880 nm T - 4 I - 15 VACTEC _ PACKAGE DIMENSIONS inch (mm) ■OSO (1 2 7 ) .0 3 0 (0 7 $ ) 1 0 0 ( 2 5 .4 ) MINIMUM ' .3 4 ( 8 .6 ) .1 7 ( 4 .3 )
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VTE5880
VTE5880
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VTB9412B
Abstract: VTB9413B VTB9414B
Text: _ 5 bE D • 3030bDT 0001DS7 T52 ■ VCT V T B 9 4 1 2 B , 3B, VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planarsilicon photodiode in
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3030bDT
0001DS7
VTB9412B,
T-41-51
VTB9412B
VTB9413B
VTB9414B
x1013
VTB9412B
VTB9413B
VTB9414B
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uv led 365
Abstract: 10H3 VTB5050UV VTB5051UV
Text: V T B 5 0 5 0 U V , 51 UV VTB Process Photodiodes E G 8. G VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planar silicon photodiode in a dual lead T O -5 package with a UV transm it tin g 'fla t' window . Cathode is common
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VTB5050UV,
VTB5050UV
VTB5051UV
9x1012
uv led 365
10H3
VTB5050UV
VTB5051UV
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VTE-C15AL
Abstract: No abstract text available
Text: SbE D 3G30bDT D001214 GaAIAs Infrared Emitting Diodes 42=1 B i V C T V T E -C 1 5 A L 15 mil Chip — 880 nm E G & G VACTEC D E SC R IP T IO N P A C K A G E D IM E N S IO N S inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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3G30bDT
D001214
VTE-C15AL
VTE-C15AL
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Untitled
Abstract: No abstract text available
Text: 5bE D BDBDbQ^ GGQ1G5M IVCT V T B 8 4 4 3 B , 8 4 4 4B VTB Process Photodiodes E 243 Q 8. G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 21F PRODUCT DESCRIPTION P la n a r s ilic o n p h o to d io d e in a recessed ceramic package. The pack age incorporates an infrared rejection
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VTB8443B
TCIs420
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Untitled
Abstract: No abstract text available
Text: SbE ]> 3 D 3 D b O c] 0Q0111S «VCT VTP8C03DS R bv . A PHOTODIODE ARRAY 8 ELEM ENT J ^ E G zO VACTEC VTP8C03 O P T O E L E C T R O N IC S E G & G VACTEC T-^I-55 FEATURES PRODUCT DESCRIPTIO N • 8 Element array • Common cathode • Symmetrically arranged bond pads
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0Q0111S
VTP8C03DS
VTP8C03
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Untitled
Abstract: No abstract text available
Text: 3 G3 D b D T GDDllfiS ÔTÛ 5L.E D .050" NPN Phototransistors IVCT V T T 9 1 12, 9113 Epoxy Lensed TO-106 Ceramic Package T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .50 (1 2 .7 ) .2 1 0 (5 .3 3 ) .065 (2 .1 6 ) .075 (1 .9 0 ) .100 (2 .5 4 ) 1 EMITTER
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O-106
O-106
400fc
VTT9112
VTT9113
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VTM3323A
Abstract: No abstract text available
Text: 5bE D m BDBGbGT □DDlES'i *1ST • VCT GaAs LED/Silicon Photodarlington Matched Pairs - T-1 Package VTM3323A 7/ E 6 & 6 VACTEC_ PACKAGE DIMENSIONS inch mm .2 3 .0 6 ( 5 .8 ) ( 1 .5 ) .0 2 3 .0 1 7 ( 0 .5 8 ) _ ( 0 .4 3 ) ■160 ( 4 . 0 6 ) .1 4 0 (3 5 6 )
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VTM3323A
VTM3323A
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Vactec
Abstract: VTA-C50 Vactec 25
Text: 5LE D BGBGbCn ODOllRG IbS IVCT V T A -C 50 .050" NPN Photodarlington Chip E G & G VACTEC C H I P D I M E N S I O N S inch mm D E S C R IP T IO N EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are
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VTA-C50
T-41-47
2850K)
Vactec
VTA-C50
Vactec 25
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VTB6060J
Abstract: VTB6061J Vactec 6061J
Text: SbE D • 3030bCH 0DÜ1 ÜM7 DD3 VTB Process Photodiodes E G & G IVCT VTB6060J, 6061J VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a 'flat" w indow , three lead T O -8 pack
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3030bCH
VTB6060J,
6061J
T-41-51
VTB60oefficient
6x1012
x1013
VTB6060J
VTB6061J
Vactec
6061J
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schematic retro reflective sensor
Abstract: Vactec EG*G Optoelectronics Reflective Optical Sensor IR Sensor long range 24016 AN VTR24F1 IR Sensor long distance
Text: LONG RANGE RETRO-REFLECTIVE SENSOR EG elG VACTEC VTR24F1 AN O PTO E L E C T R O N IC S G RO UP C O M P A N Y PRODUCT DESCRIPTION This retro-reflective sensor combines an infrared emitting diode and a unique photodarlington output to provide high sensitivity while rejecting
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VTR24F1
3G30bCH
schematic retro reflective sensor
Vactec
EG*G Optoelectronics
Reflective Optical Sensor
IR Sensor long range
24016 AN
VTR24F1
IR Sensor long distance
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VTB5051
Abstract: 3500/04 B5050 VTB5050
Text: SbE 3D30bCH D G00104Q VTB Process Photodiodes E G 75*1 - - 4 ISI I VCT V T B 5 0 5 0 , 5051 & G VACTEC PACKAGE DIMENSIONS inch mm CASE 14 PRODUCT DESCRIPTION TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) Planar silicon photodiode in a “flat" window, dual lead TO-5 package.
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3D30bCH
00104Q
VTB5050,
B5050
VTB5051
VTB5051
3500/04
B5050
VTB5050
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s 9413
Abstract: VTP9412 VTP9413
Text: SLE D • SOSObD^ 0001GÛM VTP Process Photodiodes E 6 & G TÔD « V C T VTP9412, 9413 T -41-51 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 20 Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear
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VTP9412,
T-41-51
VTP9412
VTP9413
x1012
s 9413
VTP9412
VTP9413
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VTT9113
Abstract: transistor case To 106 VTT9112 Vactec 476-1 case to106 vactec 1002
Text: SbE ì> 3Q3DbDT DDOllöS .050“ NPN Phototransistors Epoxy Lensed TO-IO6 Ceramic Package ÛTÔ I VCT VTT9112, 9113 T—41—61 E G & G VACTEC I - 1 " PAC K AG E DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION A B S O LU TE MAXIMUM RATINGS B
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O-106
VTT9112,
T0-106
O-106
100jkA
400fc
VTT9112
VTT9113
transistor case To 106
Vactec
476-1
case to106
vactec 1002
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"CT scan"
Abstract: EG*G Optoelectronics Photodiode vactec S1723-04 Vactec VTH2090 VTH2091 VTH209XDS
Text: aDBDbOT SbE n 0001153 V CT SSO VTH209XDS Rev. E LARGE AREA PIN PHOTODIODE EtSsG VACTBC V T H 2 0 9 0 , 2091 OPTOELECTRONICS S1723-04, 06 INDUSTRY EQUIVALENT G & 6 E VACTEC PRODUCT DESCRIPTION This PIN photodiode consists of a chip with a 9.2 x 9.2 mm active area mounted in a black
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VTH209XDS
VTH2090,
S1723-04,
io-12
"CT scan"
EG*G Optoelectronics
Photodiode vactec
S1723-04
Vactec
VTH2090
VTH2091
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Untitled
Abstract: No abstract text available
Text: SbE D • 3D3DtQ^ 0 0 0 1 1 0 e] 1Ö0 « V C T VTS-3 Process Photodiodes VTS 7 1, 73, 74 E G 8, G VACTEC F - 90-01 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices
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Untitled
Abstract: No abstract text available
Text: SbE D • IVCT 3D3DbDT DDGlDbT 774 VTP1188. VTP Process Photodiodes T-41-51 E G & G VACTEC PACKAGE D IM EN SIO N S inch mm CASE 12 PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub strate. A clear molded lens is used to
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VTP1188.
T-41-51
VTP1188
VTP1188L
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Untitled
Abstract: No abstract text available
Text: SbE D • BGBGbD^ 00D1222 STS GaAIAs Infrared Emitting Diodes VTE 337 2LA, 74LA Long T-1 Plastic Package — 880 nm E H V C T G & G VACTEC - T-HM3 . PACKAGE DIMENSIONS inch mm .2 2 .0 6 ( 5 .6 ) ( 1 .5 ) ( 0 .5 8 ) „ ( 0 .4 3 ) .0 2 3 .0 1 7 .0 2 6 .0 1 7
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00D1222
VTE3372LA
VTE3374LA
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Untitled
Abstract: No abstract text available
Text: SbE D • BüBObOS 0001035 3e]! H V C T V TB 1 1 1 2I , 11131 VTB Process Photodiodes E G & 6 VACTEC PACKAGE DIMENSIONS inch mm CASE 19 PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead, TO-46 package. Chip is isolated from the case. These
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VTB1113I
VTB1112I
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Untitled
Abstract: No abstract text available
Text: SbE 3G3üb[n D GGD11GÔ VTS-3 Process Photodiodes E 244 «VCT VTS_ 70, 72, 75 G & G VACTEC PRODUCT DESCRIPTION r-90-oi PACKAGE DIMENSIONS inch mm Large area planar silicon photodiodes primarily intended for use in the photovoltaic mode. These devices have excellent response in the UV
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GGD11GÃ
r-90-oi
40/jW/cm2,
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