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    zip40

    Abstract: No abstract text available
    Text: ZIP40-P-475-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 3.46 TYP. 3 版/96.12.5


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    ZIP40-P-475-1 zip40 PDF

    zip40

    Abstract: 47512
    Text: ZIP40-P-475-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.


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    ZIP40-P-475-1 zip40 47512 PDF

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    Abstract: No abstract text available
    Text: ZIP40-P-475-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 3.46 TYP. 3/Dec. 5, 1996


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    ZIP40-P-475-1 PDF

    SMD MARKING CODE 071 A01

    Abstract: smd code 38P LGA 1155 PIN diagram MARKING CODE SMD IC A08 L QUAD Aluminum nitride smd marking m05 LGA 1155 Socket PIN diagram pitch 0.4 QFP 256p marking code smd fujitsu Texas Instruments epoxy Sumitomo
    Text: To Top Contents Safety Precautions 1 Introduction to Packages 1.1 Overview 1.2 Package Lineup 1.3 Package Forms 1.4 Package Structures 1.5 How Package Dimensions Are Indicated 1.6 Package Codes 1.7 Marking 1.8 Future Trends in Packages 2 Package Mounting Methods


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    LCC-26P-M09 LCC-28P-M04 LCC-28P-M05 LCC-28P-M06 LCC-28P-M07 LCC-28C-A04 LCC-32P-M03 LCC-40P-M01 LCC-42P-M01 SMD MARKING CODE 071 A01 smd code 38P LGA 1155 PIN diagram MARKING CODE SMD IC A08 L QUAD Aluminum nitride smd marking m05 LGA 1155 Socket PIN diagram pitch 0.4 QFP 256p marking code smd fujitsu Texas Instruments epoxy Sumitomo PDF

    Untitled

    Abstract: No abstract text available
    Text: E2L0015-17-Y1 ¡ Semiconductor MSM518122 ¡ Semiconductor This version:MSM518122 Jan. 1998 Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and


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    E2L0015-17-Y1 MSM518122 072-Word MSM518122 072-word 256-word PDF

    LGA 1156 PIN OUT diagram

    Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
    Text: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)


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    DIP8-P-300-2 DIP14-P-300-2 DIP16-P-300-2 DIP18-P-300-2 MIL-M-38510 MIL-STD-883 LGA 1156 PIN OUT diagram QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram PDF

    MSM518121A

    Abstract: No abstract text available
    Text: ¡ Semiconductor ¡ Semiconductor MSM518121A This version: Jan. 1998 MSM518121A Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM DESCRIPTION The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit dynamic random access memory, RAM port, and a 256-word by 8-bit static serial access memory,


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    MSM518121A 072-Word MSM518121A 072-words 256-word SOJ40-P-400-1 PDF

    MSM518122

    Abstract: No abstract text available
    Text: ¡ Semiconductor MSM518122 ¡ Semiconductor This version:MSM518122 Jan. 1998 Previous version: Dec. 1996 131,072-Word ¥ 8-Bit Multiport DRAM @–Ú˘ ˘†Ò The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and


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    MSM518122 072-Word MSM518122 072-word 256-word SOJ40-P-400-1 PDF

    425M

    Abstract: DIP18 DIP20 DIP28 DIP32 DIP40 SOJ28-P-400-1 PGA wire bonding IPGA400-C-S33U-1 PGA240
    Text: 2. 外形寸法図 2. 外形寸法図 2 2-1. パッケージ外形寸法 - 2 2-1-1. パッケージ寸法表示記号 - 2 2-1-2. リード位置許容値について - 3


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    P-LFBGA144-1313-0 P-BGA256-2727-1 P-BGA352-3535-1 P-BGA420-3535-1 P-BGA560-3535-1 P-TFLGA32-0806-0 425M DIP18 DIP20 DIP28 DIP32 DIP40 SOJ28-P-400-1 PGA wire bonding IPGA400-C-S33U-1 PGA240 PDF

    SC3843

    Abstract: SC257
    Text: J2L0011-17-Y1 作成:1998年 MSM54C8651月 ● 前回作成:1997年 9月 ¡ 電子デバイス MSM54C865 65,536-Wordx8-Bit MULTIPORT DRAM n 概要


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    J2L001117Y1 MSM54C865 536Word MSM54C86564K- 2564ms 40475milZIP ZIP40P4751 MSM54C865xxZS 40400milSOJ SC3843 SC257 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A UNDER DEVELOPMENT TMP90CH45 CMOS 8-BIT MICRO CONTROLLERS TMP90CH45N/TMP90CH45F 1. OUTLINE AND CHARACTERISTICS TMP90CH45 is a high speed, high performance 8-bit microcontroller developed for application in the control of various devices. TMP90CH45, CMOS 8-bit microcontroller, integrates an 8-bit CPU, RAM, A/D


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    TMP90CH45 TMP90CH45N/TMP90CH45F TMP90CH45 TMP90CH45, TMP90CH45N TMP90CH45F TMP90CH45: MCU90-297 A8-15 PDF

    transistor sl 431

    Abstract: ZIP40-P-475
    Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.


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    MSM514190/SL_ 144-Word 18-Bit MSM514190/SL theMSM514190/SL cycles/16ms, transistor sl 431 ZIP40-P-475 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TM P90C840A/841A CMOS 8-BIT MICROCONTROLLERS TMP90C840AN/TMP90C841AN TM P90C840AF/TM P90C841AF 1. OUTLINE AND CHARACTERISTICS The TMP90C840A is a high-speed advanced 8-bit micro controller applicable to a variety of equipment. With its 8-bit CPU, ROM, RAM, A/D converter, multi-function timer/event counter


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    P90C840A/841A TMP90C840AN/TMP90C841AN P90C840AF/TM P90C841AF TMP90C840A TMP90C841A TMP90C840AN/841 64-pin PDF

    TMP90C844

    Abstract: No abstract text available
    Text: TOS H IB A UC/UP SME D • liDc1724S OOSlOflG 41T ■ T0S3 “T - H TOSHIBA UNDER DEVELOPMENT TMP90C844 CMOS 8-BIT MICROCONTROLLERS TMP90C844N/TMP90C844F 1. OUTLINE AND CHARACTERISTIC TMP90C844 is a high speed, high performance 8-bit microcontroller developed for


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    1724S TMP90C844 TMP90C844N/TMP90C844F TMP90C844 TMP90C844, TMP90C844N 64pin TMP90C844F P67CR PDF

    7006C

    Abstract: TOA8
    Text: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304


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    MB814260A 16-bit 16-bits MB814260A-70/-80/-10 7006C TOA8 PDF

    MB81417

    Abstract: marking 10-16
    Text: FEB i 6 1993 August 1992 Edition 2.0A fu J it su — DATASHEET MB814170A-70/-80/-10 CMOS 256K x 16 Bits Fast Page Mode Dynamic RAM The Fujitsu M B 814170A is a fully decoded C M O S Dynamic RAM D R A M that contains 4 ,1 9 4 ,3 0 4 memory cells accessible in 16- or 8-bit increments. The M B 814 1 70A features a


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    MB814170A-70/-80/-10 14170A MB81417 marking 10-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514280 /SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514280/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate the MSM514280/SL is OKI's CMOS silicon gate process technology.


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    MSM514280 144-Word 18-Bit MSM514280/SL 18-bit cycles/128ms PDF

    msm518121

    Abstract: si08
    Text: O K I Semiconductor MSM518121A 131,072-Word x 8-Bit Multiport DRAM DESCRIPTION The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit dynamicrandom access memory, RAM port, and a 256-word by 8-bitstatic serial access memory,


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    MSM518121A 072-Word MSM518121A 072-words 256-word TheMSM518121 msm518121 si08 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 4 1 90/SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM514190/SL is OKI's CMOS silicon gate process technology.


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    90/SL_ 144-Word 18-Bit MSM514190/SL theMSM514190/SL cycles/16ms, PDF

    MSM518122

    Abstract: SI05 ZIP40-P-475-1 si08
    Text: O K I Semiconductor M SM 518122 131,072-W ord x 8 -B it M ultiport DRAM DESCRIPTION The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.


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    MSM518122 072-Word MSM518122 256-word S0J40-P-400-1 SOJ42-P-400-1 SI05 ZIP40-P-475-1 si08 PDF

    MB818251

    Abstract: MB818251-70 UA729
    Text: April 1993 Edition 2.1 FUJITSU DATA SH EET M B 8 1 8 2 5 1 -70/-80 2097,152 Bits 262,144x8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial


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    144x8 MB818251 400mil 40-pin 475mil 44-pin MB818251-70 UA729 PDF

    Untitled

    Abstract: No abstract text available
    Text: August 1993 Edition 1.0 FUJITSU DATA SHEET M B 8 18253-70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818253 is a fully decoded dual port C MOS D ynam ic RAM P R A M ) 256K words by 8 bits random access parallel port and 512 words by 8 bits S tatic RAM (SRAM)


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    MB818253 B818253 40-pin 44-pin MB818253-70 MB818253-80 44-LEAD FPT-44P-M07) F44016S-1C PDF

    Untitled

    Abstract: No abstract text available
    Text: August 1993 Edition 1.0 FUJITSU DATA SHEET : M B 8 18 25 5- 70 /- 80 2097,152 Bits 2 6 2 ,1 4 4 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu M B 818255 is a fully decoded dual port C MOS D ynam ic RAM (DRAM) 256K words by 8 bits random access parallel port ana 512 w ords by 8 bits Static RAM (SRAM)


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    40-pin 44-pin MB818255-70 MB818255-80 44-LEAD FPT-44Pâ F44016S-1C PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514170A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a 262,144-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514170A/ASLachieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514170A/ASL is


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    MSM514170A/ASL 144-Word 16-Bit MSM514170A/ASL MSM514170A/ASLachieves 40-pin PDF