a1451a
Abstract: 2SA1451A A1451 2SC3709A
Text: A1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)
|
Original
|
2SA1451A
2SC3709A
a1451a
2SA1451A
A1451
2SC3709A
|
PDF
|
a1451a
Abstract: No abstract text available
Text: A1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)
|
Original
|
2SA1451A
2SC3709A
2-10R1A
a1451a
|
PDF
|
a1451a
Abstract: 2SA1451A 2SC3709A
Text: A1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1451A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)
|
Original
|
2SA1451A
2SC3709A
a1451a
2SA1451A
2SC3709A
|
PDF
|
A1451A
Abstract: No abstract text available
Text: TOSHIBA 2S A1451A 2 S A 1 451 A TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0/ j s (Typ.)
|
OCR Scan
|
A1451A
2SC3709A
A1451A
|
PDF
|
A1306 TRANSISTOR
Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)
|
OCR Scan
|
O-220
T0-220
C67078-
A1300-A2
A1329-A2
A1301-A2
BUZ11
A1301-A3
A1330-A3
A1331-A2
A1306 TRANSISTOR
t a1306
A1306A
A3206A
A1316-A3
A1318
A1309
a1328
A1013
A1300 transistor
|
PDF
|
transistor buz 36
Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A
|
OCR Scan
|
23StQS
T0-220
O-220
BUZ10S2
Z72AL
Z73AL
O-218
transistor buz 36
A1301 transistor
Z346
z309
A3206A
A1306A
z326
A1320A
A1610-A2
Z22A
|
PDF
|