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    Hirose Electric Co Ltd MQ115-16PA-4A(22)

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    DigiKey MQ115-16PA-4A(22) Tray 18
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    RAF Electronic Hardware 1531-A-4-A-22

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    DB Roberts 1531-A-4-A-22
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    A4A22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MX23L6414

    Abstract: MX23L6414TI-10 MX23L6414TI-12 MX23L6414TI-90 MX23L6414XI-10 MX23L6414XI-12 MX23L6414XI-12G MX23L6414XI-90
    Text: PRELIMINARY MX23L6414 64M-BIT MASK ROM FEATURES PIN DESCRIPTION • Bit organization - 8Mb x 8 byte mode - 4Mb x 16 (word mode) • Fast access time - Random access:90/25ns(max.) • Page Size - 8 words per page • Current - Operating:20mA - Standby:15uA(max.)


    Original     		PDF MX23L6414 64M-BIT 90/25ns MX23L6414 MX23L6414TI-10 MX23L6414TI-12 MX23L6414TI-90 MX23L6414XI-10 MX23L6414XI-12 MX23L6414XI-12G MX23L6414XI-90

    M29W640

    Abstract: 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT
    Text: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W640GH, M29W640GL M29W640GT, M29W640GB Word/32 M29W640GH/L: M29W640GT/B M29W640 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT

    M29W640GT70

    Abstract: micron nor Flash M29W640GT70N3F M29W640GH7 M29W640GL70Z A2112
    Text: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features • Common flash interface – 64-bit security code • 128-word extended memory block – Extra block used as security block or to store additional information


    Original     		PDF M29W640GH, M29W640GL M29W640GT, M29W640GB 16-word/32-byte M29W640GH/L M29W640GT/B 09005aef84e35115 640GH/L M29W640GT70 micron nor Flash M29W640GT70N3F M29W640GH7 M29W640GL70Z A2112

    M29W640GB

    Abstract: M29W640GT M29W640GL
    Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) FBGA TSOP48 (NA)


    Original     		PDF M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 16-word/32-byte M29W640GH/L: M29W640GT/B M29W640GB

    st m29w640gb

    Abstract: M29W640GL Led matrix 8x8 M29W640GT 640g morocco M29W640GB M29W640GH TFBGA48 TSOP56 M29W640GT70
    Text: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W640GH, M29W640GL M29W640GT, M29W640GB Word/32 TSOP48 TFBGA48 TSOP56 TBGA64 st m29w640gb M29W640GL Led matrix 8x8 M29W640GT 640g morocco M29W640GB M29W640GH TFBGA48 TSOP56 M29W640GT70

    TBGA64

    Abstract: TSOP56 Package Tape J-STD-020B M30LW128D M58LW064D TSOP56
    Text: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE WIDE x8 or x16 DATA BUS for HIGH


    Original     		PDF M30LW128D 64Mbit, x8/x16, M58LW064D 64Mbit 110ns 110/25ns KWord/128KByte TBGA64 TSOP56 Package Tape J-STD-020B M30LW128D TSOP56

    3F8000H-3FFFFFH

    Abstract: No abstract text available
    Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature • Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) ■ Asynchronous random/page read


    Original     		PDF M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 16-word/32-byte M29W640GH/L: M29W640GT/B 3F8000H-3FFFFFH

    st m29w640gb

    Abstract: No abstract text available
    Text: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W640GH, M29W640GL M29W640GT, M29W640GB Word/32 M29W640GH/L: M29W640GT/B st m29w640gb

    M29W640GT

    Abstract: TSOP56 M29W640 M29W640GL M29W640GB 220ch M29W640GH numonyx m29 TFBGA48 448h
    Text: M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit 8 Mbit x8 or 4 Mbit x16, uniform block or boot block 3 V supply flash memory Feature „ Supply voltage – VCC = 2.7 to 3.6 V for program/erase/read – VPP =12 V for fast program (optional) TSOP48 (NA) 12 x 20 mm


    Original     		PDF M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit TSOP48 TFBGA48 FBGA64 TBGA64 128-word TSOP56 M29W640 M29W640GL M29W640GB 220ch numonyx m29 TFBGA48 448h

    MX23L6414

    Abstract: MX23L6414TI-10 MX23L6414TI-12 MX23L6414XI-10 MX23L6414XI-12
    Text: PRELIMINARY MX23L6414 64M-BIT MASK ROM FEATURES PIN DESCRIPTION • Bit organization - 8Mb x 8 byte mode - 4Mb x 16 (word mode) • Fast access time - Random access:80/25ns(max.) • Page Size - 8 words per page • Current - Operating:40mA - Standby:15uA(max.)


    Original     		PDF MX23L6414 64M-BIT 80/25ns PM0766 AUG/29/2001 SEP/10/2001 OCT/02/2001 MX23L6414 MX23L6414TI-10 MX23L6414TI-12 MX23L6414XI-10 MX23L6414XI-12

    MX23L6414

    Abstract: MX23L6414TI-10 MX23L6414TI-12 MX23L6414TI-90 MX23L6414XI-10 MX23L6414XI-12 MX23L6414XI-12G MX23L6414XI-90 A4A22
    Text: PRELIMINARY MX23L6414 64M-BIT MASK ROM FEATURES PIN DESCRIPTION • Bit organization - 8Mb x 8 byte mode - 4Mb x 16 (word mode) • Fast access time - Random access:90/25ns(max.) • Page Size - 8 words per page • Current - Operating:20mA - Standby:15uA(max.)


    Original     		PDF MX23L6414 64M-BIT 90/25ns MAY/26/2005 MX23L6414 MX23L6414TI-10 MX23L6414TI-12 MX23L6414TI-90 MX23L6414XI-10 MX23L6414XI-12 MX23L6414XI-12G MX23L6414XI-90 A4A22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD46128512-X is a high speed, low power, 134,217,728 bits 8,388,608 words by 16 bits CMOS Mobile


    Original     		PDF PD46128512-X 128M-BIT 16-BIT PD46128512-X

    M29W640GL

    Abstract: M29W640GT st m29w640gb 640g morocco M29W640GB M29W640GH TFBGA48 TSOP56
    Text: M29W640GH M29W640GL M29W640GT M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature • Supply Voltage – VCC = 2.7 to 3.6 V for Program/Erase/Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 words


    Original     		PDF M29W640GH M29W640GL M29W640GT M29W640GB TSOP48 M29W640GH/L: M29W640GT/B M29W640GL st m29w640gb 640g morocco M29W640GB TFBGA48 TSOP56

    M30LW128D

    Abstract: M58LW064D TSOP56 TSOP56 Package Tape 56-Lead TSOP Package
    Text: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■


    Original     		PDF M30LW128D 64Mbit, x8/x16, M58LW064D 64Mbit TSOP56 110ns 110/25ns KWord/128KByte M30LW128D TSOP56 TSOP56 Package Tape 56-Lead TSOP Package

    MX23L6414

    Abstract: MX23L6414TI-10 MX23L6414TI-12 MX23L6414TI-90 MX23L6414XI-10 MX23L6414XI-12 MX23L6414XI-90
    Text: PRELIMINARY MX23L6414 64M-BIT MASK ROM FEATURES PIN DESCRIPTION • Bit organization - 8Mb x 8 byte mode - 4Mb x 16 (word mode) • Fast access time - Random access:90/25ns(max.) • Page Size - 8 words per page • Current - Operating:20mA - Standby:15uA(max.)


    Original     		PDF MX23L6414 64M-BIT 90/25ns PM0766 AUG/29/2001 SEP/10/2001 OCT/02/2001 MAY/07/2002 DEC/31/2002 MX23L6414 MX23L6414TI-10 MX23L6414TI-12 MX23L6414TI-90 MX23L6414XI-10 MX23L6414XI-12 MX23L6414XI-90

    M29W640G

    Abstract: M29W640GT NUMONYX M29W640GB M29W640GH M29W640GL TFBGA48 TSOP56
    Text: M29W640GH M29W640GL M29W640GT M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature • Supply Voltage – VCC = 2.7 to 3.6 V for Program/Erase/Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 words


    Original     		PDF M29W640GH M29W640GL M29W640GT M29W640GB TSOP48 word/32 M29W640GH/L: M29W640GT/B M29W640G NUMONYX M29W640GB M29W640GL TFBGA48 TSOP56