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Advanced Semiconductor Inc AGR18090EF RF MOSFET Transistors 1.8-1.88GHz 90Watt Gain 14dB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR18090EF					1 $76.43 10 $64.96 100 $60.39 1000 $60.39 10000 $60.39	Get Quote

AGR18090EF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR18090EF		Agere Systems	MOSFET		Original	PDF

AGR18090EF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PB03-065RFPP Abstract: AGR18090EF c101 TRANSISTOR transistor A114 transistor C101 AGR18090EU JESD22-A114 AGR18090E PB03-090RFPP Text: Preliminary Product Brief April 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for	Original	AGR18090E AGR18090E PB03-090RFPP PB03-065RFPP) PB03-065RFPP AGR18090EF c101 TRANSISTOR transistor A114 transistor C101 AGR18090EU JESD22-A114 PB03-090RFPP	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E Characteristic10-12, DS04-033RFPP DS02-326RFPP)	PDF
18-12 049 transistor Abstract: Transistor J182 TRANSISTOR Z10 100B100JW500X AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-A114 RF POWER TRANSISTOR Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E AGR18090E amplR21090U AGR18090EF AGR18090F M-AGR21090F 12-digit 18-12 049 transistor Transistor J182 TRANSISTOR Z10 100B100JW500X AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-A114 RF POWER TRANSISTOR	PDF
J182 transistor Abstract: "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090E AGR18090EU C1812C105K5RACTR JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E AGR18090E DS04-157RFPP DS04-104RFPP) J182 transistor "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090EU C1812C105K5RACTR JESD22-C101A	PDF
AGR18090EF Abstract: No abstract text available Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E AGR18090EF	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM	PDF
Transistor J182 Abstract: No abstract text available Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E DS02-326RFPP Transistor J182	PDF
gl 3201 Abstract: No abstract text available Text: Product Brief August 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for	Original	AGR18090E PB03-172RFPP PB03-090RFPP) gl 3201	PDF
100B100JW500X Abstract: AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A Text: Preliminary Data Sheet February 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR18090E AGR18090E DS04-104RFPP DS04-033RFPP) 100B100JW500X AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A	PDF