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    AI101 Search Results

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    AI101 Price and Stock

    Microchip Technology Inc DSC1001AI1-016.0000

    MEMS OSC XO 16.0000MHZ CMOS SMD
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    DigiKey DSC1001AI1-016.0000 Tube 811 1
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    Avnet Americas DSC1001AI1-016.0000 Tube 4 Weeks 600
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    • 1000 $0.36982
    • 10000 $0.93365
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    Mouser Electronics DSC1001AI1-016.0000 104
    • 1 $1.35
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    Newark DSC1001AI1-016.0000 Bulk 600
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    Microchip Technology Inc DSC1001AI1-016.0000 Tube 4,674 4 Weeks
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    NAC DSC1001AI1-016.0000 Tube 300
    • 1 $1.34
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    • 1000 $1.09
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    Master Electronics DSC1001AI1-016.0000
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    • 1000 $1.12
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    Vishay Sfernice P10XXAI101KB30

    POT 100 OHM 1/2W CERMET LINEAR
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    DigiKey P10XXAI101KB30 Box 142 1
    • 1 $9.35
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    Vishay Sfernice P10YPAI101KB30

    TRIMMER
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    DigiKey P10YPAI101KB30 Box 200
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    Rochester Electronics LLC KAI-1010-ABA-CR-BA

    CCD SENSOR, 1008 HORIZ PIXELS, 1
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    DigiKey KAI-1010-ABA-CR-BA Bulk 1
    • 1 $1615.32
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    onsemi KAI-1010-ABA-CR-BA

    IMAGE SENSOR CCD 1MP 28CDIP
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    Rochester Electronics KAI-1010-ABA-CR-BA 1 1
    • 1 $1553.19
    • 10 $1553.19
    • 100 $1460
    • 1000 $1320.21
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    Find more AI101 price and stock on Findchips.com

    AI101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A3688A

    Abstract: UMS A6250 ES-CHA6250-QFG A3667A 7663 a3688 A6250 AN0017 MO-220
    Text: Advance Information: AI1019 QFN Packaged 6-9GHz High Power Amplifier NC NC VD1 GND VD2 NC GND VD3 GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 GND 3 22 GND RF IN 4 21 RFOUT GND 5 20 GND NC 6 19 NC NC 7 18 NC NC 8 17 NC 9 10 11 12 13 14 15 16 NC NC


    Original     		PDF AI1019 A3688A A3667A A7663A AI10191270 ES-CHA6250-QFG A3688A UMS A6250 ES-CHA6250-QFG A3667A 7663 a3688 A6250 AN0017 MO-220

    BP 109 transistor

    Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
    Text: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.


    Original     		PDF AI1010 CHK015A AN0019 AN0020 ES-CHK015A-SMA AI10101182 BP 109 transistor transistor BP 109 CHK015A-SMA HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01

    CHK040A-SOA

    Abstract: CHK-04
    Text: Advance Information: AI1011 40W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK040A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.


    Original     		PDF AI1011 CHK040A AN0019 AN0020 ES-CHK040A-SOA AI1011182 CHK040A-SOA CHK-04

    "15 GHz" power amplifier 41dBm

    Abstract: AN0017 MO-220
    Text: Advance Information: AI1013 QFN Packaged 13-15.5GHz High Power Amplifier D1 GND D2 NC D3 NC D4 GND GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 NC 3 22 NC GND 4 21 GND RFIN 5 20 RFOUT GND 6 19 GND NC 7 18 NC NC 8 17 NC 9 10 11 12 13 14 15 16 GND NC


    Original     		PDF AI1013 AI10131270 ES-CHA6252-QFG "15 GHz" power amplifier 41dBm AN0017 MO-220

    M69KB128AA

    Abstract: BCR10
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


    Original     		PDF M69KB128AA 104MHz M69KB128AA BCR10

    BCR10

    Abstract: M69KM096AA
    Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus


    Original     		PDF M69KM096AA 83MHz 32-Word) 83MHz BCR10 M69KM096AA

    Untitled

    Abstract: No abstract text available
    Text: LRI2K 2048 bit EEPROM TAG IC at 13.56 MHz with 64-bit UID and KILL code, ISO15693 and ISO18000-3 Mode 1 compliant Preliminary Data Features • ISO15693 standard fully compliant ■ ISO18000-3 mode 1 standard fully compliant ■ 13.56 MHz ±7k Hz carrier frequency


    Original     		PDF 64-bit ISO15693 ISO18000-3

    Untitled

    Abstract: No abstract text available
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


    Original     		PDF M69KB128AA 104MHz

    CR10

    Abstract: M58LR128HB M58LR128HT VFBGA56
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB VFBGA56 CR10 M58LR128HB M58LR128HT VFBGA56

    a6583

    Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz a6583 CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0

    Untitled

    Abstract: No abstract text available
    Text: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M30L0R8000T2 M30L0R8000B2

    Untitled

    Abstract: No abstract text available
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB

    t3383

    Abstract: No abstract text available
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz t3383

    Untitled

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KL70ZA6F

    bcr10

    Abstract: No abstract text available
    Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ Multiplexed Address/Data bus


    Original     		PDF M69KM096AA 83MHz 32-Word) 83MHz bcr10

    CR10

    Abstract: J-STD-020B M58WR128FB VFBGA56
    Text: M58WR128FT M58WR128FB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR128FT M58WR128FB 66MHz CR10 J-STD-020B M58WR128FB VFBGA56

    bo67

    Abstract: A42 B331 equivalent A42 B331 TIC 160D plc structured text arrays EQUIVALENT TIC 160D rs232 equivalence "bcd ics" 1100 GE RS1Q
    Text: ISaGRAF Version 3.5 USER'S GUIDE ICS Triplex ISaGRAF Inc. Information in this document is subject to change without notice and does not represent a commitment on the part of ICS Triplex ISaGRAF Inc. The software, which includes information contained in any databases, described in this document


    Original     		PDF writtenB-231 B-232 B-178, D-428 B-228 B-203, C-349 B-180, bo67 A42 B331 equivalent A42 B331 TIC 160D plc structured text arrays EQUIVALENT TIC 160D rs232 equivalence "bcd ics" 1100 GE RS1Q

    M58WR064K

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR064K

    M58WR032QB

    Abstract: CR10 M58WR016QB M58WR016QT M58WR032QT VFBGA56 8812h
    Text: M58WR016QT M58WR016QB M58WR032QT M58WR032QB 16 Mbit and 32 Mbit x16, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • ■ Supply voltage – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR016QT M58WR016QB M58WR032QT M58WR032QB 66MHz M58WR032QB CR10 M58WR016QB VFBGA56 8812h

    CR10

    Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
    Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)


    Original     		PDF M58WR064HU M58WR064HL 66MHz CR10 CR14 M58WR064HL M58WR064HU VFBGA44

    F8000-FFFFF

    Abstract: No abstract text available
    Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features „ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit F8000-FFFFF

    LA 7673 diagrams

    Abstract: National PC87591 schematic circuit for bios programer thermistor ttc 103 TTC 103 thermistor PC87591S IO CHIP TTC 474 thermistor FB121 ROHM capacitor TTC 103 ntc thermistor
    Text: March 2002 Revision 1.06 PC87591E, PC87591S and PC87591L LPC Mobile Embedded Controllers General Description The PC87591x interfaces with the host via an LPC interface that provides the host with access to the Keyboard and embedded controller interface channels, integrated functions,


    Original     		PDF PC87591E, PC87591S PC87591L PC87591x PC87591x PC87591L LA 7673 diagrams National PC87591 schematic circuit for bios programer thermistor ttc 103 TTC 103 thermistor PC87591S IO CHIP TTC 474 thermistor FB121 ROHM capacitor TTC 103 ntc thermistor

    schematic circuit for bios programer

    Abstract: LA 7673 diagrams QVC12 TTC 103 ntc thermistor TIS153 thermistor ttc 101 TTC 103 thermistor thermistor ttc 103 NTC TTC 103 thermistor PA 0016
    Text: May 2001 Rev. 1.03 PC87591E and PC87591S LPC Mobile Embedded Controller General Description Like members of National’s SuperI/O family, the PC87591x is PC01 and ACPI compliant. The National Semiconductor PC87591E and PC87591S are highly integrated, embedded controllers with an embedded-RISC core and integrated, advanced functions. Targeted for a wide range of portable applications that use the Low


    Original     		PDF PC87591E PC87591S PC87591x PC87591x. PC87591x CR16B 16-bit schematic circuit for bios programer LA 7673 diagrams QVC12 TTC 103 ntc thermistor TIS153 thermistor ttc 101 TTC 103 thermistor thermistor ttc 103 NTC TTC 103 thermistor PA 0016

    ISO15963

    Abstract: CRC16 ISO15693 1 out of 4 inventory request block diagram of VCD block diagram of VCD and its functions ISO15693 ISO18000-3 ISO10373-7
    Text: LRI2K Memory TAG IC, 64 bit UID, 2048 bit EEPROM with KILL Code 13.56MHz, ISO15693 and ISO18000-3 Mode 1 compliant PRELIMINARY DATA Features summary • ISO15693 Standard Fully Compliant ■ ISO18000-3 Mode 1 Standard Fully Compliant ■ 13.56MHz ±7kHz Carrier Frequency


    Original     		PDF 56MHz, ISO15693 ISO18000-3 56MHz 26Kbit/s) 423KHz 484KHz ISO15963 CRC16 ISO15693 1 out of 4 inventory request block diagram of VCD block diagram of VCD and its functions ISO10373-7