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    ALL TRANSISTORS LEAD ALTERNATIVE EQUIV Search Results

    ALL TRANSISTORS LEAD ALTERNATIVE EQUIV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    ALL TRANSISTORS LEAD ALTERNATIVE EQUIV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    ecl 806

    Abstract: CML ECL termination PLE 2 - 25va Vterm pecl logic voltage levels
    Text: Application Note 806 LVPECL, PECL, ECL Logic and Termination March 2009 by: Ken Johnson and Bob Gubser ABSTRACT This application note will highlight characteristics of Pletronics Low Voltage Positive Emitter Coupled Logic LVPECL frequency control products and provide guidance for


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    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


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    SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607 PDF

    "General Electric SCR Manual" 6th

    Abstract: General Electric SCR Manual 6th edition SCR Applications Handbook TA84-5 SCR Handbook, General electric AN918 MOTOROLA Rudy Severns HEXFET Power MOSFET designer manual "scr manual" AN-918
    Text: Harris Semiconductor No. AN9320 Harris Power June 1993 Parallel Operation Of Semiconductor Switches Author: Sebald R. Korn, Consulting Applications Engineer In uninterruptable power supplies demands for current handling capability to meet load current requirements plus margins for overload and reliability purposes often exceed the


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    AN9320 AN-918, TA84-5) "General Electric SCR Manual" 6th General Electric SCR Manual 6th edition SCR Applications Handbook TA84-5 SCR Handbook, General electric AN918 MOTOROLA Rudy Severns HEXFET Power MOSFET designer manual "scr manual" AN-918 PDF

    BAS21LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAS21LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode BAS21LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current


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    BAS21LT1/D BAS21LT1 236AB) BAS21LT1/D* BAS21LT1 PDF

    MP6101

    Abstract: Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002
    Text: Power Modules PRODUCT GUIDE CONTENTS 1. 2. 3. 4. 5. 6. Product List Introduction to the Products and Their Features Structure and Dimensions Power Module Packages System Diagram of Power Module Products Power Module Product Matrix 7. Product Line-ups Listed by Package


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    MP4005~ MP4101~ MP4301~ MP6301 MP4501~ MP6901 S-10M MP4208~ S-12M MP4410~ MP6101 Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002 PDF

    BAV99LT1-D

    Abstract: BAV99LT1
    Text: MOTOROLA Order this document by BAV99LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 Motorola Preferred Device 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR


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    BAV99LT1/D BAV99LT1 236AB) BAV99LT1/D* BAV99LT1-D BAV99LT1 PDF

    PNP TRANSISTor experiments

    Abstract: English Electric Valve Bar Display Driver LED manufacturing dashboards AN-378 C1995 FLVD P-Channel Depletion Mode Field Effect Transistor 8349 "P-Channel JFET" national
    Text: National Semiconductor Application Note 378 David Stewart May 1985 Introduction well suited to automotive applications because of its high brightness level relatively low power consumption and wide operating temperature range Further due to the recent introduction of thick and thin film techniques into display device manufacturing processes it is with relative ease


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    igbt gate driver circuit schematic hcpl-3120

    Abstract: HP 2200 optocoupler 2200 OPTOCOUPLER inverter IGBT driver hcpl3120 IGBT motor DRIVER SCHEMATIC hcpl reference SCHEMATIC igbt dimmer IGBT DRIVER SCHEMATIC hcpl 4503 OPTOCOUPLER hp 2631 LC full-bridge INVERTER TRANSFORMERS design HP 2630 optocoupler
    Text: Designer’s Guide to Isolation Circuits About This Designer’s Guide Hewlett-Packard optocouplers can be used in an array of isolation applications ranging from power supply and motor control circuits to data communication and digital logic interface circuits.


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    the-32 igbt gate driver circuit schematic hcpl-3120 HP 2200 optocoupler 2200 OPTOCOUPLER inverter IGBT driver hcpl3120 IGBT motor DRIVER SCHEMATIC hcpl reference SCHEMATIC igbt dimmer IGBT DRIVER SCHEMATIC hcpl 4503 OPTOCOUPLER hp 2631 LC full-bridge INVERTER TRANSFORMERS design HP 2630 optocoupler PDF

    BAV99LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAV99LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 Motorola Preferred Device 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage


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    BAV99LT1/D BAV99LT1 236AB) BAV99LT1 PDF

    marking 8b sot-23

    Abstract: marking jv BAS116LT1 BAS116LT3
    Text: MOTOROLA Order this document by BAS116LT1/D SEMICONDUCTOR TECHNICAL DATA BAS116LT1 Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel


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    BAS116LT1/D BAS116LT1 BAS116LT1 BAS116LT3 inch/10 236AB) marking 8b sot-23 marking jv PDF

    marking JY sot-23

    Abstract: BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor BAV199LT1 BAV199LT3
    Text: MOTOROLA Order this document by BAV199LT1/D SEMICONDUCTOR TECHNICAL DATA BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times


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    BAV199LT1/D BAV199LT1 BAV199LT1 BAV199LT3 inch/10 236AB) marking JY sot-23 BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor PDF

    MMBD6050LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBD6050LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode MMBD6050LT1 3 3 CATHODE 1 ANODE 1 2 CASE 318 – 08, STYLE 8 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current


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    MMBD6050LT1/D MMBD6050LT1 236AB) MMBD6050LT1 PDF

    MMBD2835LT1

    Abstract: MMBD2836LT1
    Text: MOTOROLA Order this document by MMBD2835LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 3 1 2 CATHODE 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol


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    MMBD2835LT1/D MMBD2835LT1 MMBD2836LT1 236AB) MMBD2835LT1 MMBD2836LT1 PDF

    marking 8b sot-23

    Abstract: MMBD914LT1
    Text: MOTOROLA Order this document by MMBD914LT1/D SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc


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    MMBD914LT1/D MMBD914LT1 236AB) marking 8b sot-23 MMBD914LT1 PDF

    BAV70LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAV70LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device ANODE 1 3 CATHODE 2 ANODE 3 MAXIMUM RATINGS EACH DIODE 1 Symbol Value Unit Reverse Voltage VR 70 Vdc


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    BAV70LT1/D BAV70LT1 236AB) BAV70LT1/D* BAV70LT1 PDF

    BAS16LT1

    Abstract: A6 SOT-23
    Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS16LT1 3 CATHODE 1 ANODE Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge


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    BAS16LT1/D BAS16LT1 BAS16LT1/D* BAS16LT1 A6 SOT-23 PDF

    MMBD6050LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBD6050LT1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode MMBD6050LT1 3 3 CATHODE 1 ANODE 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit


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    MMBD6050LT1/D MMBD6050LT1 236AB) MMBD6050LT1 PDF

    MMBD7000LT1

    Abstract: AF SOT 23
    Text: MOTOROLA Order this document by MMBD7000LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode MMBD7000LT1 Motorola Preferred Device 1 ANODE 3 CATHODE/ANODE 3 2 CATHODE 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current


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    MMBD7000LT1/D MMBD7000LT1 236AB) MMBD7000LT1 AF SOT 23 PDF

    BAW56LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAW56LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Anode BAW56LT1 Motorola Preferred Device CATHODE 1 ANODE 3 2 CATHODE 3 MAXIMUM RATINGS EACH DIODE 1 Symbol Value Unit Reverse Voltage VR 70 Vdc


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    BAW56LT1/D BAW56LT1 236AB) BAW56LT1/D* BAW56LT1 PDF

    MMBD6100LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBD6100LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 3 2 ANODE 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc


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    MMBD6100LT1/D MMBD6100LT1 236AB) MMBD6100LT1 PDF

    Motorola 417

    Abstract: BAS21LT1
    Text: MOTOROLA Order this document by BAS21LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode 3 CATHODE BAS21LT1 Motorola Preferred Device 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current


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    BAS21LT1/D BAS21LT1 236AB) Motorola 417 BAS21LT1 PDF

    BAV170LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BAV170LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV170LT1 Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times


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    BAV170LT1/D BAV170LT1 BAV170LT1 BAV170LT3 inch/10 236AB) PDF