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    AO3415L Search Results

    AO3415L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO3415L_107 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V SOT23 Original PDF

    AO3415L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original
    AO3415 AO3415 AO3415L AO3415L O-236 OT-23) OT-23 PDF

    AO3415L

    Abstract: AO3415
    Text: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original
    AO3415 AO3415/L AO3415 AO3415L -AO3415L O-236 OT-23) PDF

    Untitled

    Abstract: No abstract text available
    Text: AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original
    AO3415 AO3415 AO3415L AO3415L O-236 OT-23) PDF

    MEC1308-NU

    Abstract: APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4


    Original
    VDD18 BA41-xxxxxxA MEC1308-NU APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308 PDF

    AO3415L

    Abstract: ao3415
    Text: Rev 3: May 2004 AO3415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3415 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original
    AO3415 AO3415 AO3415L AO3415L O-236 OT-23) PDF