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Text: AOS Semiconductor Product Reliability Report AO3422/AO3422L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Oct 26, 2006 1 This AOS product reliability report summarizes the qualification result for AO3422. Accelerated
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AO3422
Abstract: AO3422L M310210
Text: AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422/L uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load
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OT-23)
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Untitled
Abstract: No abstract text available
Text: AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load
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OT-23)
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Abstract: No abstract text available
Text: AO3422 N-Channel Enhancement Mode Field Effect Transistor TO-236 SOT-23 Features VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 4.5V) RDS(ON) < 200mΩ (VGS = 2.5V) General Description D The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It
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OT-23)
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AO3422
Abstract: AO3422L
Text: AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load
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AO3422
AO3422
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OT-23)
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