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    AO4433/L

    Abstract: No abstract text available
    Text: AO4433 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4433/L uses advanced trench technology to provide excellent RDS ON and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.AO4433 and


    Original     		AO4433 AO4433/L AO4433L -AO4433 AO4433 PDF

    AO4433

    Abstract: AO4433L a1760
    Text: AO4433 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4433 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The


    Original     		AO4433 AO4433 AO4433L a1760 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4433 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4433 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The


    Original     		AO4433 AO4433 AO4433L PDF