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    Abstract: No abstract text available
    Text: AO6808 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6808/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable


    Original     		AO6808 AO6808/L AO6808 AO6808L -AO6808L PDF

    DEVICES125

    Abstract: AO6808 as125
    Text: AO6808 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6808/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable


    Original     		AO6808 AO6808/L AO6808 AO6808L -AO6808L DEVICES125 as125 PDF