Untitled
Abstract: No abstract text available
Text: Rev 2: Nov 2004 AO8803, AO8803L Green Product Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This
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AO8803,
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AO8803
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Untitled
Abstract: No abstract text available
Text: AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
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AO8803
AO8803/L
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AO8803
Abstract: AO8803L
Text: AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
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AO8803
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AO8803
Abstract: 70°C AO8803L
Text: AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
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AO8803
AO8803/L
AO8803
AO8803L
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70°C
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