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    AOI41 Price and Stock

    Alpha & Omega Semiconductor AOI418

    MOSFET N-CH 30V 13.5A/36A TO251A
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    DigiKey AOI418 Tube
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    Alpha & Omega Semiconductor AOI4185

    MOSFET P-CH 40V 40A TO251A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AOI4185 Tube 3,500
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    TME AOI4185 1,506 1
    • 1 $0.667
    • 10 $0.346
    • 100 $0.304
    • 1000 $0.256
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    Alpha & Omega Semiconductor AOI4130

    MOSFET N-CH 60V 6.5A/30A TO251A
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    Alpha & Omega Semiconductor AOI4102

    MOSFET N-CH 30V 8A/19A TO251A
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    Alpha & Omega Semiconductor AOI4184

    MOSFET N-CH 40V 12A/50A TO251A
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    DigiKey AOI4184 Tube 3,500
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    TME AOI4184 90 1
    • 1 $1.047
    • 10 $0.478
    • 100 $0.422
    • 1000 $0.354
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    Find more AOI41 price and stock on Findchips.com

    AOI41 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AOI4102 Alpha & Omega Semiconductor SMPS - 30V N-Channel MOSFET Original PDF
    AOI4126 Alpha & Omega Semiconductor General Purpose - 100V N-Channel MOSFET SDMOS Original PDF
    AOI4130 Alpha & Omega Semiconductor General Purpose - 60V N-Channel MOSFET Original PDF
    AOI4144_002 Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 13A TO251A Original PDF
    AOI4146 Alpha & Omega Semiconductor SMPS Low Side - 30V N-Channel MOSFET SDMOS (Replacement AOI516) Original PDF
    AOI418 Alpha & Omega Semiconductor SMPS High Side - 30V N-Channel MOSFET Original PDF
    AOI4184 Alpha & Omega Semiconductor Load Switch - 40V N-Channel MOSFET Original PDF
    AOI4185 Alpha & Omega Semiconductor General Purpose - AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor Original PDF

    AOI41 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AOD4185

    Abstract: No abstract text available
    Text: AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS ON and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high


    Original     		AOD4185/AOI4185 AOD4185/AOI4185 O-251A VD4185/AOI4185 AOD4185 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


    Original     		AOD4126/AOI4126 AOD4126 AOI4126 19ABCDEF O-251A PDF

    AOD4126

    Abstract: AOI4126 aod412
    Text: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


    Original     		AOD4126/AOI4126 AOD4126 AOI4126 O-251A aod412 PDF

    AOD4185

    Abstract: AOI41
    Text: AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench technology to provide excellent R DS ON and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high


    Original     		AOD4185/AOI4185 AOD4185/AOI4185 O-251A VGI4185 AOD4185 AOI41 PDF

    AOD4184

    Abstract: AOI4184 AOD418 TO252-DPAK
    Text: AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current


    Original     		AOD4184/AOI4184 AOD4184/AOI4184 O-251A AOD4184 AOI4184 AOD418 TO252-DPAK PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD418/AOI418 30V N-Channel MOSFET General Description Product Summary The AOD418/AOI418 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high


    Original     		AOD418/AOI418 AOD418/AOI418 O251A PDF

    OMEGA 2F

    Abstract: transistor B9C
    Text: AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS ON and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high


    Original     		AOD4185/AOI4185 AOD4185/AOI4185 D4185/AOI4185 OMEGA 2F transistor B9C PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4102/AOI4102 30V N-Channel MOSFET General Description Product Summary The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original     		AOD4102/AOI4102 AOD4102/AOI4102 859AB O251A JuncOD4102/AOI4102 PDF

    aod4130

    Abstract: No abstract text available
    Text: AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for


    Original     		AOD4130/AOI4130 AOD4130/AOI4130 O-251A aod4130 PDF

    AOI4142

    Abstract: No abstract text available
    Text: AOI4142 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOI4142 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology


    Original     		AOI4142 AOI4142 O-251A PDF

    AOD4126

    Abstract: AOI4126
    Text: AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


    Original     		AOD4126/AOI4126 AOD4126 AOI4126 O-251A Sy/AOI4126 PDF

    AOI4140

    Abstract: No abstract text available
    Text: AOI4140 N-Channel SDMOSTM Power Transistor General Description Features The AOI4140 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology


    Original     		AOI4140 AOI4140 O-251A PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4144/AOI4144/AOU4144 30V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4144/AOI4144/AOU4144 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior.


    Original     		AOD4144/AOI4144/AOU4144 AOD4144/AOI4144/AOU4144 O251A AD4144/AOI4144/AOU4144 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


    Original     		AOD4126/AOI4126 AOD4126 AOI4126 O-251A PDF

    AOI4102

    Abstract: T0252 aod4102
    Text: AOD4102/AOI4102 30V N-Channel MOSFET General Description Product Summary The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.


    Original     		AOD4102/AOI4102 AOD4102/AOI4102 O-252 O251A Junction-to-D4102/AOI4102 AOI4102 T0252 aod4102 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high


    Original     		AOD4184/AOI4184 AOD4184/AOI4184 O-251A PDF

    AOD4146

    Abstract: aoD414
    Text: AOD4146/AOI4146 30V N-Channel MOSFET TM SDMOS General Description Product Summary The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


    Original     		AOD4146/AOI4146 AOD4146/AOI4146 O-251A AOI4146 AOD4146 aoD414 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4146/AOI4146 30V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


    Original     		AOD4146/AOI4146 AOD4146/AOI4146 O-251A PDF

    aod4184

    Abstract: No abstract text available
    Text: AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current


    Original     		AOD4184/AOI4184 AOD4184/AOI4184 O-251A AOI4184 aod4184 PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for


    Original     		AOD4130/AOI4130 AOD4130/AOI4130 O-251A PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS ON with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high


    Original     		AOD4184/AOI4184 AOD4184/AOI4184 O-251A PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD418/AOI418 30V N-Channel MOSFET General Description Product Summary The AOD418/AOI418 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high


    Original     		AOD418/AOI418 AOD418/AOI418 O251A PDF

    Untitled

    Abstract: No abstract text available
    Text: AOD4146/AOI4146 30V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is


    Original     		AOD4146/AOI4146 AOD4146/AOI4146 O-251A PDF

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 PDF