18N50
Abstract: ISS106 500V N-Channel MOSFET TO-3P
Text: AP18N50W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 500V RDS ON 0.27Ω ID G 20A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP18N50W
18N50W
18N50
ISS106
500V N-Channel MOSFET TO-3P
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ISS106
Abstract: No abstract text available
Text: AP18N50W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic BVDSS 500V RDS ON 0.27 ID G 20A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP18N50W
100ms
ISS106
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AP18N50W
Abstract: No abstract text available
Text: AP18N50W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 500V RDS ON 0.27Ω ID G 20A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP18N50W
100ms
AP18N50W
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP18N50W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance D Simple Drive Requirement 500V R DS ON Fast Switching Characteristics G RoHS-compliant, halogen-free BV DSS 270mΩ ID 20A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP18N50W-HF-3
AP18N50W-HF-3
AP18N50
18N50W
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