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    AP98T03GP Search Results

    AP98T03GP Datasheets (1)

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    AP98T03GP-HF Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Original PDF

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    SHF300

    Abstract: MOSFET VDS 20V TO-220
    Text: AP98T03GP/S-HF RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic BVDSS 30V RDS ON 2.8mΩ ID G 200A S Description Advanced Power MOSFETs from APEC provide the designer with the


    Original
    AP98T03GP/S-HF O-263 AP98T03GP) O-220 25rce 100us 100ms SHF300 MOSFET VDS 20V TO-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP98T03GP/S RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D 30V RDS ON Ultra-low On-resistance Fast Switching Characteristic ID G 2.8m 200A S Description Advanced Power MOSFETs from APEC provide the designer with the


    Original
    AP98T03GP/S O-263 AP98T03GP) O-220 100us 100ms PDF

    AP98T03GP

    Abstract: No abstract text available
    Text: AP98T03GP/S RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic BVDSS 30V RDS ON 2.8mΩ ID G 200A S Description Advanced Power MOSFETs from APEC provide the


    Original
    AP98T03GP/S O-220 O-263 AP98T03GP) 100us 100ms AP98T03GP PDF

    Untitled

    Abstract: No abstract text available
    Text: AP98T03GP/S-HF RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D 30V RDS ON Ultra-low On-resistance Fast Switching Characteristic ID G 2.8m 200A S Description Advanced Power MOSFETs from APEC provide the designer with the


    Original
    AP98T03GP/S-HF O-263 AP98T03GP) O-220 100us 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: AP98T03GP/S RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic BVDSS 30V RDS ON 2.8mΩ ID G 200A S Description Advanced Power MOSFETs from APEC provide the designer with the


    Original
    AP98T03GP/S O-263 AP98T03GP) O-220 100us 100ms PDF