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Microchip Technology Inc APT1001RBN MOSFET N-CH 1000V 11A TO247AD
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DigiKey	APT1001RBN	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc APT1001RBNG MOSFET MOS 4 1000 V 1 Ohm TO-247, Projected EOL: 2044-04-30
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Microchip Technology Inc	APT1001RBNG			22 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Richardson RFPD	APT1001RBNG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc APT1001RBNRG MOSFET MOS 4 Rugged 1000 V 1 Ohm TO-247, Projected EOL: 2049-07-03
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Microchip Technology Inc	APT1001RBNRG			12 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Richardson RFPD	APT1001RBNRG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

APT1001RBN Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT1001RBN		Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET		Original	PDF
APT1001RBN		Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 11A TO247AD		Original	PDF
APT1001RBNR		Advanced Power Technology	High Voltage Power MOSFETs		Scan	PDF

APT1001RBN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
APT901RBN Abstract: APT1001RBN 1001RBN APT5030BN Text: D TO-247 G APT1001RBN 1000V 11.0A 1.00Ω S POWER MOS IV 21.0A 0.30Ω APT5030BN 500V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage	Original	PDF	O-247 APT1001RBN APT5030BN 1001RBN O-247AD APT901RBN 1001RBN
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	PDF	AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
s3v12 Abstract: No abstract text available Text: A d van ced P o w er Te c h n o l o g y • Q D APT1001RBN APT901RBN Os 1000V 11.0A 1.00U 900V 11.0A 1.000 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter	OCR Scan	PDF	APT1001RBN APT901RBN APT1001R/901RBN O-247AD s3v12
APT1001R1BNR Abstract: 1001R1 Text: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U APT1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	PDF	APT1001RBNR APT1001R1BNR 001R1Ö -100m O-247AD 1001R1
1001r1bn Abstract: APT1001R-18NR APT1001RBNR APT1001R1BNR Text: O D O S A d van ced R o w er Te c h n o lo g y APT1001RBNR 1000V 11.0A 1.00Q APT.1001R1BNR 1000V 10.5A 1.10D POWER MOS IV® UIS RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd *0M V GS VGSM po 1J' ‘ STG	OCR Scan	PDF	APT1001RBNR APT1001R-18NR APT1001R1BNR APT1001R/1001R1 O-247AD 1001r1bn APT1001R-18NR
APT901RBN Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN	OCR Scan	PDF	000027b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT3520BN
Untitled Abstract: No abstract text available Text: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 APT1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.	OCR Scan	PDF	APT1001RBNR APT1001R1BNR APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD 0001S7T
APT901RBN Abstract: ha9002 Text: • T ADVANCED I r J P ow er M Te c h n o lo g y APT1001RBN APT901RBN Hi'vvtK mos 1000V 11.0A 1.00Q 900V 11.0A 1.000 n® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter	OCR Scan	PDF	APT1001RBN APT901RBN APT1001R/901RBN O-247AD ha9002
APT1001RBNR Abstract: No abstract text available Text: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 APT1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	PDF	APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD
1001RBN Abstract: No abstract text available Text: ADVANCED P ow er Te c h n o l o g y APT1001RBN 1000V 11.0A 1.00Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001RBN	OCR Scan	PDF	APT1001RBN 1001RBN APT1001RBN O-247AD 1001RBN
210 RBN Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR Text: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q APT1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg	OCR Scan	PDF	APT1001RBNR APT1001R1BNR O-247AD 210 RBN 1001r1bn 1001RBN NA 1001 OA 10 diode APT1001 1001R1BNR
APT5085BN Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN Text: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN	OCR Scan	PDF	0GDD27b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN O-247 APT5085BN APT501R1BN APT801R2BN APT5025BN
APT*1002R4BN Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0	OCR Scan	PDF	O-247 APT1001RBN APT1001R1BN APT1001RBNR APT1001R1BNR APT1001R3BN APT1001R6BN APT1002RBN APT1002R4BN APT1002RBNR APT*1002R4BN APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF

Untitled Abstract: No abstract text available Text: A dvanced P ow er Te c h n o l o g y • A P T 1 0 0 1 R B N 1 0 0 0 V 1 1 .0 A 1 .0 0 C 2 9 0 0 V 1 1 .0 A 1 .0 0 n A P T 9 0 1 R B N P*WER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 259C unless otherwise specified.	OCR Scan	PDF	APT901RBN APT1001RBN O-247AD