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    APT1004RGN Search Results

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    APT1004RGN Price and Stock

    Microchip Technology Inc APT1004RGNTX

    Mosfet _ CUSTOM, Projected EOL: 2049-02-05
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    Microchip Technology Inc APT1004RGNTX 52 Weeks
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    Onlinecomponents.com APT1004RGNTX
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    APT1004RGN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT1004RGN Advanced Power Technology N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF

    APT1004RGN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: D TO-257 G APT1004RGN 1000V 3.3A 4.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT1004RGN UNIT 1000 Volts Drain-Source Voltage


    Original     		PDF O-257 APT1004RGN APT1004RGN O-257AA

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT1004RGN 1000V 3.3A 4.00Í2 POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tr = 25°C unless otherwise specified. Parameter APT1004RGN UNIT 1000


    OCR Scan     		PDF APT1004RGN APT1004RGN O-257AA

    OC203

    Abstract: No abstract text available
    Text: APT 904RGN APT 1004HGN 900 1000 Drain-Source Voltage APT APT 904R2GN 1004R2GN 900 1000 UNIT Volts Continuous Drain Current @ Tc - 25 C 3.3 3.0 *0M Pulsed Drain Currant ® 13.2 12 V GS Gate-Source Voltage ±30 Volts Total Power Dissipation @ Tc » 25°C 100


    OCR Scan     		PDF 904RGN 1004HGN 904R2GN 1004R2GN O-257AA OC203