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    APT102GA60L Price and Stock

    Microchip Technology Inc APT102GA60L

    IGBT PT 600V 183A TO264
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    DigiKey APT102GA60L Tube 40
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    Avnet Americas APT102GA60L Tube 26 Weeks 40
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    Mouser Electronics APT102GA60L
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    Newark APT102GA60L Bulk 40
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    Future Electronics APT102GA60L 40
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    Microchip Technology Inc APT102GA60L Tube 26 Weeks
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    Onlinecomponents.com APT102GA60L
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    TME APT102GA60L 1
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    NAC APT102GA60L Tube 26
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    Master Electronics APT102GA60L
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    Microsemi Corporation APT102GA60L

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    Bristol Electronics APT102GA60L 15
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    APT102GA60L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT102GA60L Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264 [L]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 102; Original PDF

    APT102GA60L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: APT102GA60B2 APT102GA60L 600V APT102GA60B2 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT102GA60B2 APT102GA60L APT102GA60B2 efficie20 O-247 PDF

    APT102GA60B2

    Abstract: APT102GA60L MIC4452 max8170
    Text: APT102GA60B2 APT102GA60L 600V APT102GA60B2 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT102GA60B2 APT102GA60L O-247 APT102GA60B2 APT102GA60L MIC4452 max8170 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT102GA60B2 APT102GA60L 600V APT102GA60B2 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT102GA60B2 APT102GA60L O-247 PDF

    APT102GA60B2

    Abstract: APT102GA60L MIC4452
    Text: APT102GA60B2 APT102GA60L 600V APT102GA60B2 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT102GA60B2 APT102GA60L O-247 APT102GA60B2 APT102GA60L MIC4452 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF