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    APT50M75B2LL Price and Stock

    Microchip Technology Inc APT50M75B2LLG

    MOSFET N-CH 500V 57A T-MAX
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    Newark APT50M75B2LLG Bulk 30
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    Microchip Technology Inc APT50M75B2LLG Tube 26 Weeks
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    NAC APT50M75B2LLG Tube 18
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    APT50M75B2LL Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT50M75B2LL Advanced Power Technology POWER MOS 7 500V 57A 0.075 Ohm Original PDF
    APT50M75B2LL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT50M75B2LL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT50M75B2LL Unknown Power MOS 7, 500V 57A, MOS-FET N-Channel enhanced Original PDF
    APT50M75B2LLG Microsemi Power MOSFET; Package: T-MAX [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; Original PDF

    APT50M75B2LL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT50M75B2LL

    Abstract: APT50M75LLL ic power mosfet 100V 57A
    Text: APT50M75B2LL APT50M75LLL 500V 57A 0.075Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    PDF APT50M75B2LL APT50M75LLL O-264 O-264 O-247 APT50M75B2LL APT50M75LLL ic power mosfet 100V 57A

    APT50M75LL

    Abstract: No abstract text available
    Text: APT50M75B2LL APT50M75LLL 500V 57A 0.075W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    PDF APT50M75B2LL APT50M75LLL O-264 O-264 APT5780) O-247 APT50M75LL

    APT50M75LLL

    Abstract: APT50M75B2LL
    Text: APT50M75B2LL APT50M75LLL 500V 57A 0.075W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    PDF APT50M75B2LL APT50M75LLL O-264 O-264 O-247 APT50M75LLL APT50M75B2LL

    Untitled

    Abstract: No abstract text available
    Text: APT50M75B2LL APT50M75LLL 500V 57A 0.075W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    PDF APT50M75B2LL APT50M75LLL O-264 O-264 O-247

    APT50M75B2LL

    Abstract: APT50M75LLL
    Text: APT50M75B2LL APT50M75LLL 500V 57A 0.075Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    PDF APT50M75B2LL APT50M75LLL O-264 O-264 O-247 APT50M75B2LL APT50M75LLL

    Untitled

    Abstract: No abstract text available
    Text: APT50M75B2LL APT50M75LLL 500V 57A 0.075Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original
    PDF APT50M75B2LL APT50M75LLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT50M75B2LL G APT50M75LLL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 500V POWER MOS 7 R MOSFET 57A 0.075 Ω B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original
    PDF APT50M75B2LL APT50M75LLL Puls22) O-247

    Untitled

    Abstract: No abstract text available
    Text: APT50M75B2LL APT50M75LLL 500V 57A 0.075W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original
    PDF APT50M75B2LL APT50M75LLL O-264 O-247

    APT-0403

    Abstract: APT50M70B2LL APT9302 jfet 400V depletion Severns N-Channel jfet 400V depletion dodge APT0103 N-Channel jfet 500V depletion APT0002
    Text: Application Note APT-0403 Rev B March 2, 2006 Power MOSFET Tutorial Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 Introduction drain-source voltage is supported by the reverse biased


    Original
    PDF APT-0403 APT0002, APT9302, APT0103, APT50M70B2LL APT9302 jfet 400V depletion Severns N-Channel jfet 400V depletion dodge APT0103 N-Channel jfet 500V depletion APT0002

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original
    PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original
    PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original
    PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original
    PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original
    PDF

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original
    PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301

    APT9302

    Abstract: APT50M70B2LL APT0103 APT-0403 FREDFET jfet 400V depletion Severns APT0002 dodge Mohan
    Text: Application Note APT-0403 Rev B March 2, 2006 Power MOSFET Tutorial Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 Introduction drain-source voltage is supported by the reverse biased


    Original
    PDF APT-0403 APT0002, APT9302, APT0103, APT9302 APT50M70B2LL APT0103 FREDFET jfet 400V depletion Severns APT0002 dodge Mohan