Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ASI10639 Search Results

    ASI10639 Datasheets (1)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    ASI10639 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    ASI10639 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    DB30A

    Abstract: ASI10639
    Text: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD The ASI OSC-2.0SM is Designed for B .060 x 45° CHAMFER C E G FEATURES: L • • • Omnigold Metalization System 700 mA VCC 30 V PDISS 17.6 W @ TC ≤ 50 C TJ -65 OC to +200 OC


    Original     		ASI10639 DB30A ASI10639 PDF

    Untitled

    Abstract: No abstract text available
    Text: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 2L FLG DESCRIPTION: A ØD The ASI OSC-2.0SM is Designed for General Purpose Oscillator Applications up to 2.3 GHz. B .060 x 45° CHAMFER C E G FEATURES: L • VCC = 21 V • Common Collector • Omnigold Metalization System


    Original     		PDF

    OSC-2.0SM

    Abstract: ASI10639
    Text: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG The ASI OSC-2.0SM is a high performance silicon transistor designed for high power oscillator applications to 3.0 GHz with typical RF power of 2.0W A ØD B .060 x 45° CHAMFER


    Original     		PDF