Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ASI10725 Search Results

    ASI10725 Datasheets (1)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    ASI10725 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    ASI10725 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    VHB25-28S

    Abstract: ASI10725
    Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B


    Original     		VHB25-28S VHB25-28S 112x45° ASI10725 ASI10725 PDF

    ASI10725

    Abstract: VHB25-28S
    Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB25-28S is Designed for .112x45° A B FEATURES: • • • Omnigold Metalization System ØC D 4.0 A VCBO 65 V F E 35 V 4.0 V PDISS 40 W @ TC = 25 OC TJ -65 OC to +200 OC


    Original     		VHB25-28S VHB25-28S 112x45° ASI10725 ASI10725 PDF

    ASI10725

    Abstract: VHB25-28S
    Text: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES: • Common Emitter • PG = 8.5 dB at 25 W/175 MHz • Omnigold Metalization System


    Original     		VHB25-28S VHB25-28S 112x45° 490CHARACTERISTICS ASI10725 ASI10725 PDF