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    AT31011 Price and Stock

    Broadcom Limited AT-31011-TR2G

    RF TRANS NPN 5.5V SOT143
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    Broadcom Limited AT-31011-BLKG

    RF TRANS NPN 5.5V SOT143
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    Broadcom Limited AT-31011-TR1G

    RF TRANS NPN 5.5V SOT143
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    Hewlett Packard Co AT-31011-BLK

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    Quest Components AT-31011-BLK 16
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    AT31011 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AT-31011 Agilent Technologies Low Current, High Performance NPN Silicon Bipolar Transistor Original PDF
    AT-31011 Avago Technologies Microcurrent transistors for battery operations Original PDF
    AT-31011 Hewlett-Packard Low Current, High Performance NPN Silicon Bipolar Transistor Scan PDF
    AT-31011-BLK Agilent Technologies BJT, NPN, Low Current Transistor, VCB0 11V, IC 0.016A Original PDF
    AT-31011-BLK Agilent Technologies Low Current, High Performance NPN Silicon Bipolar Transistor Original PDF
    AT31011-BLK Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AT-31011-BLKG Avago Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN BIPO 5.5V 16MA SOT-143 Original PDF
    AT-31011-TR1 Agilent Technologies Low Current, High Performance NPN Silicon Bipolar Transistor Original PDF
    AT-31011-TR1 Agilent Technologies BJT, NPN, Low Current Transistor, VCB0 11V, IC 0.016A Original PDF
    AT31011-TR1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    AT-31011-TR1G Avago Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN BIPO 5.5V 16MA SOT-143 Original PDF
    AT-31011-TR2G Avago Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN BIPO 5.5V 16MA SOT-143 Original PDF

    AT31011 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    AT-31011

    Abstract: AT32011 AT-32011 AT-32033 AT-32033-TR1G sot-23 npn marking code 162
    Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal


    Original     		PDF AT-32011, AT-32033 AT-32011 AT-32033 AT32011 OT-143. transis20 5989-2643EN AV02-0796EN AT-31011 AT-32033-TR1G sot-23 npn marking code 162

    sm 4109

    Abstract: .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063
    Text: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 AT-64020 AT-64023 AT-31625 sm 4109 .g1 sot23 30533 41410 AT-30533 AT-31011 AT-31033 AT-32011 AT-41511 AT-32063

    ku-band pll lnb

    Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		PDF 11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package

    AT-32011

    Abstract: AT-31011 AT32011 AT-32033 AT-32033-TR1G sot-23 marking code 352
    Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal


    Original     		PDF AT-32011, AT-32033 AT-32011 AT-32033 AT32011 OT-143. 5989-2643EN AV02-0796EN AT-31011 AT-32033-TR1G sot-23 marking code 352

    AT-31011

    Abstract: AT-310 AT31033 AT-31033
    Text: AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT31033 uses the 3 lead SOT‑23, while the AT-31011 places


    Original     		PDF AT-31011, AT-31033 AT-31011 AT-31033 AT31033 OT143. 5989-2642EN AV02-0795EN AT-310

    SOT143 L03

    Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power


    Original     		PDF 5964-3854E SOT143 L03 L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original     		PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    ic m 61266

    Abstract: an 17830 MGA-62563 82945 A 68066 1041-64 ic 8279 36.3769 59703 AT-41486
    Text: s-params.txt Spice Parameters - S-params ABA-51563 SP.txt -!ABA-51563 !s-parameters at Vd=5V. Last updated 16/01/03 AR. # GHZ S MA R 50 0.05 0.062 0.1 0.063 0.15 0.063 0.2 0.063 0.25 0.061


    Original     		PDF ABA-51563 ABA-51563 ic m 61266 an 17830 MGA-62563 82945 A 68066 1041-64 ic 8279 36.3769 59703 AT-41486

    yg 2025

    Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		PDF 5964-3854E yg 2025 HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800

    sm 4109

    Abstract: transistor G1 SOT-23 AT-30511 AT-42010 SOT-143 g1 AT-41486 AT-30533 AT-31011 AT-32011 AT-32033
    Text: Low Noise Transistors Typical Specifications @ 25°C Case Temperature Part Number AT-30511 Frequency (GHz) VCE (V) NFo (dB) Ga (dB) P1 dB (dBm) 0.9 2.7 1.1 16.0 +7.0 G1 dB |S21E|2 @ 1.0 GHz (dBm) (dB) Package Page No. 16.5 17.9 [1] SOT-143 plastic SM 4-23


    Original     		PDF AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 AT-32011 sm 4109 transistor G1 SOT-23 AT-30511 AT-42010 SOT-143 g1 AT-41486 AT-30533 AT-31011 AT-32011 AT-32033

    ISDB-t modulator

    Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		PDF 11a/b/g AV00-0116EN AV00-0141EN ISDB-t modulator ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316

    AT-41435

    Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
    Text: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 5988-9509EN 5989-0925EN AT-41435 transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC

    HP346A

    Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		PDF

    Bipolar Transistors Selection Guide

    Abstract: transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor
    Text: Silicon Bipolar Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 AT-30533 AT-31011 AT-31033 AT-32011 AT-32032 AT-32033 AT-32063 AT-41410 AT-41411 Bipolar Transistors Selection Guide transistor G1 MSOP-3 AT-42010 AT-41511 200 mil BeO transistor

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870

    1B60

    Abstract: AT31011
    Text: Whpïï mitiM H EW LETT PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011:0.9 dB NF, 13 dB GA


    OCR Scan     		PDF AT-31011 AT-31033 5965-1401E 5965-8919E 4447SA4 0G17bDl 1B60 AT31011

    W1A sot23 transistor

    Abstract: ci LA 7804 ON w1a SOT-23 wl 1281 W02 SOT23 w1a, sot-23 ST 11791 EN 13557 yg 2025 W1A SOT23
    Text: HEW LETT 1 "KM P A C K A R D 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applica­ tions in the VHF through microwave frequency range.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz


    OCR Scan     		PDF AT-31011 AT-31033 AT-31011: AT-31033: OT-143 AT-31011 AT-31033 5963-1862E 5965-1401E

    TRANSISTOR NPN BA RV SOT - 89

    Abstract: No abstract text available
    Text: W hat PACKARD HEW LE TT* 1"KM Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features * High Perform ance Bipolar Transistor O ptim ized for Low Current, Low Voltage Operation * A m plifier T ested 900 MHz Performance:


    OCR Scan     		PDF AT-31011 AT-31033 us013 ooo65j 5963-1862E 65-1401E TRANSISTOR NPN BA RV SOT - 89

    marking 24b sot-23

    Abstract: 1B60 AT-310 AT-31011 AT-31033 AT-31033-TR1
    Text: 4 T h at mlrJm HEW LETT P ack ard S Low C urrent, High P erform ance NPN S ilicon B ipolar T ransistor Technical Data AT-31011 AT-31033 Features Description • H igh Perform ance B ipolar T ran sistor O ptim ized for Low C urrent, Low Voltage O peration • 9 00 MHz Perform ance:


    OCR Scan     		PDF AT-31011 AT-31033 AT-31011: AT-31033: OT-143 OT-143 AT-31011) OT-23 AT-31033) marking 24b sot-23 1B60 AT-310 AT-31033 AT-31033-TR1

    31033P

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliMPACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High P erform ance B ipolar T ran sistor O ptim ized for L ow Current, L ow V oltage O peration • 900 MHz Perform ance:


    OCR Scan     		PDF AT-31011 AT-31033 AT-31033 OT-143 sAT-31011 OT-23, AT-310nt 31033P

    T4148

    Abstract: TIC 160 D sm 4109 TIC 160 M T-41410 TIC+160+M
    Text: What H EW LETT 1 "KM PA CK A R D Silicon Bipolar Transistors Selection Guide NF0 and Ga are specified at a low noise bias point, while Pt dB, Gj dB, and IS2lEl- are specified at bias points which optimize these parameters. Low N oise Transistors Typical Specifications @ 25°C Case Temperature


    OCR Scan     		PDF AT-31011 T-31033 T-41410 T-41435 T-41485 AT-41511 T4148 TIC 160 D sm 4109 TIC 160 M TIC+160+M